GEN2 SiC Schottky Diode LSIC2SD065C08A, 650 V, 8 A, TO-252-2L (DPAK) RoHS Pb LSIC2SD065C08A 650 V, 8 A SiC Schottky Barrier Diode Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, SiC Schottky Diode and a maximum operating junction temperature of 175 C. These diodes series are ideal for applications where im- provements in efficiency, reliability, and thermal manage - ment are desired. Features AEC-Q1 01 qualified Excellent surge capability Positive temperature Extremely fast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 1 75 C maximum switching losses operating junction compared to Si bipolar temperature diodes Circuit Diagram TO-252-2L (DPAK) Applications B oost diodes in PFC or Solar in verters DC/DC stages Industrial motor drives Case Case Switch-mode power EV c harging stations supplies Uninterruptible power supplies Environmental RoHS Littelfuse RoHS logo = 1 2 RoHS conform 1 2 Littelfuse HF logo = Halogen Free Pb Littelfuse Pb-free logo = Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage V - 650 V RRM DC Blocking Voltage V T = 25 C 650 V R J 23 T = 25 C C Continuous Forward Current I T = 135 C 10.7 A F C 8 T = 150 C C Non-Repetitive Forward Surge Current I T = 25 C, T = 10 ms, Half sine pulse 40 A FSM C P 88 T = 25 C C Power Dissipation W P Tot 38 T = 110 C C Operating Junction Temperature -55 to 175 C T - J Storage Temperature -55 to 150 C T - STG Soldering Temperature (reflow MSL1) 260 C T - sold 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/07/19GEN2 SiC Schottky Diode LSIC2SD065C08A, 650 V, 8 A, TO-252-2L (DPAK) Electrical Characteristics Value SiC Schottky Diode Characteristics Symbol Conditions Unit Min. Typ. Max. I = 8 A, T = 25 C - 1.5 1.8 F J Forward Voltage V V F - 1.85 - I = 8 A, T = 175 C F J V = 650 V , T = 25 C - <1 50 R J Reverse Current A I R - 15 - V = 650 V , T = 175 C R J V = 1 V, f = 1 MHz - 415 - R Total Capacitance - 56 - pF C V = 200 V, f = 1 MHz R - 41 - V = 400 V, f = 1 MHz R V R C(V)dV Total Capacitive Charge Qc = - 29 - nC Q V = 400 V, C R 0 Footnote: T = +25 C unless otherwise specified J Thermal Characteristics Characteristics Symbol Value Unit Thermal Resistance 1.7 C/W R JC Figure 1: Typical Foward Characteristics Figure 2: T ypical Reverse Characteristics 8 T = 25 C J 7 T = 150 C J 6 T = 125 C J T = 175 C J 5 4 3 T = -55 C J 2 1 0 00.250.5 0.75 11.251.5 1.75 2 Voltage (V) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/07/19 Current (A)