GEN2 SiC Schottky Diode LSIC2SD065C10A, 650 V, 10 A, TO-252-2L (DPAK) RoHS Pb LSIC2SD065C10A 650 V, 10 A SiC Schottky Barrier Diode Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, SiC Schottky Diode and a maximum operating junction temperature of 175 C. These diodes series are ideal for applications where im- provements in efficiency, reliability, and thermal manage - ment are desired. Features AEC-Q101 qualified Excellent surge capability P ositive temperature Extremely fast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 175 C maximum switching losses operating junction compared to Si bipolar temperature diodes Circuit Diagram TO-252-2L (DPAK) Applications Boost diodes in PFC or Solar in verters DC/DC stages Industrial motor drives Case Case Switch-mode power EV c harging stations supplies Uninterruptible power supplies Environmental RoHS Littelfuse RoHS logo = 1 2 RoHS conform 1 2 Littelfuse HF logo = Halogen Free Pb Littelfuse Pb-free logo = Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage 650 V V - RRM DC Blocking Voltage 650 V V T = 25 C R J 27 T = 25 C C Continuous Forward Current I T = 135 C 12.5 A F C 10 T = 147 C C Non-Repetitive Forward Surge Current 48 A I T = 25 C, T = 10 ms, Half sine pulse FSM C P T = 25 C 100 C Power Dissipation W P Tot 43 T = 110 C C Operating Junction Temperature -55 to 175 C T - J Storage Temperature -55 to 150 C T - STG Soldering Temperature (reflow MSL1) 260 C T - sold 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/07/19GEN2 SiC Schottky Diode LSIC2SD065C10A, 650 V, 10 A, TO-252-2L (DPAK) Electrical Characteristics Value SiC Schottky Diode Characteristics Symbol Conditions Unit Min. Typ. Max. I = 10 A, T = 25 C - 1.5 1.8 F J Forward Voltage V V F - 1.85 - I = 10 A, T = 175 C F J V = 650 V , T = 25 C - <1 50 R J Reverse Current A I R - 25 - V = 650 V , T = 175 C R J - 470 - V = 1 V, f = 1 MHz R Total Capacitance - 60 - pF C V = 200 V, f = 1 MHz R - 43 - V = 400 V, f = 1 MHz R V R C(V)dV Total Capacitive Charge Qc = - 30 - nC Q V = 400 V, C R 0 Thermal Characteristics Characteristics Symbol Value Unit Thermal Resistance 1.5 C/W R JC Figure 1: T ypical Foward Characteristics Figure 2: T ypical Reverse Characteristics 10 T = 25 C 9 J 8 T = 150 C J 7 T = 125 C J T = 175 C 6 J 5 4 3 2 T = -55 C J 1 0 00.250.5 0.75 11.251.5 1.75 2 Voltage (V) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/07/19 Current (A)