GEN2 SiC Schottky Diode LSIC2SD065C20A, 650 V, 20 A, TO-252-2L (DPAK) RoHS Pb LSIC2SD065C20A 650 V, 20 A SiC Schottky Barrier Diode Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, SiC Schottky Diode and a maximum operating junction temperature of 175 C. These diodes series are ideal for applications where im- provements in efficiency, reliability, and thermal manage - ment are desired. Features AEC-Q101 qualified Excellent surge capability Positive temperature Extremely f ast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 1 75 C maximum switching losses operating junction compared to Si bipolar temperature diodes Circuit Diagram TO-252-2L (DPAK) Applications B oost diodes in PFC or Solar in verters DC/DC stages Industrial motor drives S witch-mode power Case Case EV charging stations supplies Uninterruptible power supplies Environmental RoHS Littelfuse RoHS logo = RoHS conform 1 2 Littelfuse HF logo = 1 2 Halogen Free Pb Littelfuse Pb-free logo = Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage 650 V V - RRM DC Blocking Voltage 650 V V T = 25 C R J T = 25 C 45 C Continuous Forward Current A I F 20 T = 135 C C Non-Repetitive Forward Surge Current 90 A I T = 25 C, T = 10 ms, Half sine pulse FSM C P 135 T = 25 C C Power Dissipation W P Tot 60 T = 110 C C Operating Junction Temperature -55 to 175 C T - J Storage Temperature -55 to 150 C T - STG Soldering Temperature (reflow MSL1) 260 C T - sold 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/07/19GEN2 SiC Schottky Diode LSIC2SD065C20A, 650 V, 20 A, TO-252-2L (DPAK) Electrical Characteristics Value Characteristics Symbol Conditions Unit SiC Schottky Diode Min. Typ. Max. - 1.5 1.8 I = 20 A, T = 25 C F J Forward Voltage V V F I = 20 A, T = 175 C - 1.85 - F J - <1 50 V = 650 V , T = 25 C R J Reverse Current I A R V = 650 V , T = 175 C - 60 - R J - 960 - V = 1 V, f = 1 MHz R Total Capacitance C V = 200 V, f = 1 MHz - 120 - pF V R R - 86 - V = 400 V, f = 1 MHzC(V)dV Qc = R V0 R Total Capacitive Charge C(V)dV - 63 - nC Q V = 400 V, Qc = C R 0 Thermal Characteristics Characteristics Symbol Value Unit Thermal Resistance 1.1 C/W R JC Figure 1: Typical Foward Characteristics Figure 2: Typical Reverse Characteristics 20 18 T = 25 C J 16 T = 125 C T = 150 C J J 14 12 T = 175 C J 10 8 T = -55 C J 6 4 2 0 00.250.5 0.75 11.251.5 1.75 2 Voltage (V) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/07/19 Current (A)