GEN2 SiC Schottky Diode LSIC2SD065E20CCA, 650 V, 20 A, TO-247-3L RoHS Pb LSIC2SD065E20CCA 650 V, 20 A SiC Schottky Barrier Diode Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and SiC Schottky Diode a maximum operating junction temperature of 175 C. This diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features AEC-Q101 qualified Ex cellent surge capability Positive temperature Extremely fast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 1 75 C. maximum switching losses operating junction compared to Si bipolar temperature diodes Applications Circuit Diagram TO-247-3L Boost diodes in PFC or Solar in verters DC/DC stages Industrial motor drives PIN 1 Switch-mode power EV charging stations supplies PIN 2 CASE Uninter ruptible power supplies PIN 3 Environmental Lit telfuse RoHS logo = RoHS RoHS conform Lit telfuse HF logo = Halogen Free 12 3 Lit telfuse Pb-free logo = Pb Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage 650 V V - RRM DC Blocking Voltage 650 V V T = 25 C R J 27 / 54 T = 25 C Continuous Forward Current C A I F (Per Leg/Component) T = 147 C 10 / 20 C Non-Repetitive Forward Surge Current 50 A I T = 25 C, t = 10 ms, Half sine pulse FSM C P (Per Leg) 100 / 200 T = 25 C Power Dissipation C P W Tot (Per Leg/Component) T = 110 C 43 / 86 C Operating Junction Temperature -55 to 175 C T - J Storage Temperature -55 to 150 C T - STG Soldering Temperature 260 C T - sold 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/04/19GEN2 SiC Schottky Diode LSIC2SD065E20CCA, 650 V, 20 A, TO-247-3L Electrical Characteristics (T = 25 C unless otherwise specified) J Value Characteristics Symbol Conditions Unit SiC Schottky Diode Min. Typ. Max. I = 10 A, T = 25 C - 1.5 1.8 F J Forward Voltage V V F - 1.85 - I = 10 A, T = 175 C F J - <1 50 V = 650 V, T = 25 C R J Reverse Current I A R V = 650 V, T = 175 C - 25 - R J V = 1 V, f = 1 MHz - 470 - R Total Capacitance C V = 200 V, f = 1 MHz - 60 - pF R - 43 - V = 400 V, f = 1 MHz R V R Total Capacitive Charge C(V)dV - 30 - nC Q V = 400 V, Qc = C R 0 Thermal Characteristics Characteristics Symbol Value Unit Thermal Resistance (Per Leg/Component) 1.50 / 0.75 C/W R JC Figure 1: Typical Foward Characteristics Figure 2: Typical Reverse Characteristics 10 9 T = -55 C J T = 25C 8 J T = 125 C J 7 T = 150 C J T = 175 C J 6 5 4 3 2 1 0 00.250.5 0.75 11.251.5 1.75 2 Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 03/04/19 Current (A)