GEN2 SiC Schottky Diode LSIC2SD120A08, 1200 V, 8 A, TO-220-2L RoHS Pb LSIC2SD120A08 Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, SiC Schottky Diode and a maximum operating junction temperature of 175 C. These diodes series are ideal for applications where im- provements in efficiency, reliability, and thermal manage- ment are desired. Features P ositive temperature Extremely fast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 175 C maximum switching losses operating junction compared to Si bipolar temperature diodes Ex cellent surge capability Circuit Diagram TO-220-2L Applications Case Case Boost diodes in PFC or Solar in verters DC/DC stages Industrial motor drives Switch-mode power EV c harging stations supplies Uninterruptible power 12 supplies Environmental 1 2 RoHS Littelfuse RoHS logo = RoHS conform Littelfuse HF logo = Halogen Free Pb Lit telfuse PB-free logo = Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage 1200 V V - RRM DC Blocking Voltage 1200 V V T = 25 C R j 24.5 T = 25 C C Continuous Forward Current I T = 135 C 12 A F C 8 T = 154 C C Non-Repetitive Forward Surge Current 65 A I T = 25 C, T = 10 ms, Half sine pulse FSM C P T = 25 C 125 C Power Dissipation W P Tot 54 T = 110 C C Operating Junction Temperature -55 to 175 C T - J Storage Temperature -55 to 150 C T - STG Soldering Temperature 260 C T - sold 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/20/17GEN2 SiC Schottky Diode LSIC2SD120A08, 1200 V, 8 A, TO-220-2L Electrical Characteristics Value Characteristics Symbol Conditions Unit SiC Schottky Diode Min. Typ. Max. I = 8 A, T = 25 C - 1.5 1.8 F J Forward Voltage V V F - 2.2 - I = 8 A, T = 175 C F J - <1 100 V = 1200 V , T = 25 C R J Reverse Current I A R V = 1200 V , T = 175 C - 10 R J V = 1 V, f =1 MHz - 454 - R Total Capacitance C V = 400 V, f = 1 MHz - 45 - pF R - 33 - V = 800 V, f = 1 MHz R V R C(V)dV Total Capacitive Charge Q V = 800 V, - 47 - nC Qc = C R 0 Footnote: T = +25 C unless otherwise specified J Thermal Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. Thermal Resistance - - 1.2 - C/W R JC Figure 1: Typical Foward Characteristics Figure 2: Typical Reverse Characteristics 1E-4 16 T = - 55C J 14 T = 25C J T = 125C 1E-5 J 12 T = 150C J T = 175C J 10 8 1E-6 T = 175 C J 6 T = 150 C J 4 1E-7 2 T = 25 C J T = 125 C 0 J 00.5 11.5 22.5 33.5 4 1E-8 0200 400600 80010001200 Forward Voltage (V) Reverse Voltage, V (V) R 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/20/17 Forward Current (A) Reverse Current, I (A) R