GEN2 SiC Schottky Diode LSIC2SD120C08, 1200 V, 8 A, TO-252-2L (DPAK) LSIC2SD120A08, 1200 V, 8 A, TO-220-2L RoHS Pb LSIC2SD120C08 Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, SiC Schottky Diode and a maximum operating junction temperature of 175 C. These diodes series are ideal for applications where im- provements in efficiency, reliability, and thermal manage- ment are desired. Features Positive temperature Extremely f ast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 1 75 C maximum switching losses operating junction compared to Si bipolar temperature diodes Ex cellent surge capability Circuit Diagram TO-252-2L ( DPAK ) Applications B oost diodes in PFC or Solar in verters Case DC/DC stages Industrial motor driv es S witch-mode power EV charging stations supplies Uninter ruptible power supplies Environmental Pin 2 Pin 1 1 2 RoHS Lit telfuse RoHS logo = RoHS conform Littelfuse HF logo = Halogen Free Pb Lit telfuse PB-free logo = Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage V - 1200 V RRM DC Blocking Voltage V T = 25 C 1200 V R j T = 25 C 24.5 C Continuous Forward Current 12 A I T = 135 C F C 8 T = 154 C C Non-Repetitive Forward Surge Current I T = 25 C, T = 10 ms, Half sine pulse 65 A FSM C P 125 T = 25 C C Power Dissipation W P Tot T = 110 C 54 C Operating Junction Temperature -55 to 175 C T - J Storage Temperature -55 to 150 C T - STG Soldering Temperature 260 C T - sold 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 11/13/17GEN2 SiC Schottky Diode LSIC2SD120C08, 1200 V, 8 A, TO-252-2L (DPAK) LSIC2SD120A08, 1200 V, 8 A, TO-220-2L Electrical Characteristics Value Characteristics Symbol Conditions Unit SiC Schottky Diode Min. Typ. Max. I = 8 A, T = 25 C - 1.5 1.8 F J Forward Voltage V V F - 2.2 - I = 8 A, T = 175 C F J - <1 100 V = 1200 V , T = 25 C R J Reverse Current I A R V = 1200 V , T = 175 C - 10 R J V = 1 V, f =1 MHz - 454 - R Total Capacitance C V = 400 V, f = 1 MHz - 45 - pF R - 33 - V = 800 V, f = 1 MHz R V R C(V)dV Total Capacitive Charge Q V = 800 V, - 47 - nC Qc = C R 0 Footnote: T = +25 C unless otherwise specified J Thermal Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. Thermal Resistance - - 1.2 - C/W R JC Figure 1: Typical Foward Characteristics Figure 2: T ypical Reverse Characteristics 1E-4 16 T = - 55C J 14 T = 25C J T = 125C 1E-5 J 12 T = 150C J T = 175C J 10 8 1E-6 T = 175 C J 6 T = 150 C J 4 1E-7 2 T = 25 C J T = 125 C 0 J 1E-8 00.5 11.5 22.5 33.5 4 0200 400600 80010001200 Forward Voltage (V) Reverse Voltage, V (V) R 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 11/13/17 Forward Current (A) Reverse Current, I (A) R