GEN2 SiC Schottky Diode LSIC2SD120C10, 1200 V, 10 A, TO-252-2L (DPAK) RoHS Pb LSIC2SD120C10 Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 C. These diodes series are ideal for applications where im- provements in efficiency, reliability, and thermal manage- ment are desired. Features P ositive temperature Extremely fast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 1 75 C maximum switching losses operating junction compared to Si bipolar temperature diodes Ex cellent surge capability Circuit Diagram TO-252-2L (DPAK) Applications Boost diodes in PFC or Solar inverters Case DC/DC stages Industrial motor driv es Switch-mode power EV charging stations supplies Uninter ruptible power supplies Environmental Pin 2 Pin 1 1 2 RoHS Lit telfuse RoHS logo = RoHS conform Littelfuse HF logo = Halogen Free Pb Littelfuse PB-free logo = PB--free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage 1200 V V - RRM DC Blocking Voltage 1200 V V T = 25 C R j T = 25 C 33 C Continuous Forward Current I T = 135 C 16 A F C 10 T = 156 C C Non-Repetitive Forward Surge Current 80 A I T = 25 C, T = 10 ms, Half sine pulse FSM C P T = 25 C 176 C Power Dissipation W P Tot 76 T = 110 C C Operating Junction Temperature -55 to 175 C T - J Storage Temperature -55 to 150 C T - STG Soldering Temperature 260 C T - sold 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/02/17GEN2 SiC Schottky Diode LSIC2SD120C10, 1200 V, 10 A, TO-252-2L (DPAK) Electrical Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. - 1.5 1.8 I = 10 A, T = 25 C F J Forward Voltage V V F I = 10 A, T = 175 C - 2.2 F J - <1 100 V = 1200 V , T = 25 C R J Reverse Current A I R - 10 V = 1200 V , T = 175 C R J V = 1 V, f =1 MHz - 582 R Total Capacitance C V = 400 V, f = 1 MHz - 53 pF R - 40 V = 800 V, f = 1 MHz R V R Total Capacitive Charge - 57 nC Q V = 800 V, C(V)dV Qc = C R 0 Footnote: T = +25 C unless otherwise specified J Thermal Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. Thermal Resistance - 0.85 C/W R - JC Figure 1: T ypical Foward Characteristics Figure 2: T ypical Reverse Characteristics 20 -4 T = 25 C J 18 T = 125 C J T = 150 C J 16 T = 175 C J 1E -5 14 12 1E -6 T = 175 C J 10 8 T = 150 C J 6 1E -7 T = 125 C J T = 25 C J 4 2 1E -8 0200 400 600 80010001200 0 Reverse Voltage, V (V) R -0.50.5 1.52.5 3.54.5 Forward Voltage (V) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/02/17 1E Forward Current (A) Reverse Current, I (A) R