GEN2 SiC Schottky Diode LSIC2SD120E20CC, 1200 V, 20 A, TO-247-3L RoHS Pb LSIC2SD120E20CC Description This series of silicon carbide (SiC) Schottky diodes has neg- ligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 C. These diodes series are ideal for applications where improve- ments in efficiency, reliability, and thermal management are desired. Features Positive temperature Extremely f ast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 1 75 C maximum switching losses operating junction compared to Si bipolar temperature diodes Excellent surge capability Circuit Diagram TO247-3L Applications Boost diodes in PFC or Solar in verters DC/DC stages Industrial motor drives Switch-mode power PIN 1 EV c harging stations supplies Uninter ruptible power PIN 2 CASE supplies Environmental PIN 3 Lit telfuse RoHS logo = RoHS RoHS conform Littelfuse HF logo = Halogen Free Littelfuse PB-free logo = Pb 12 3 Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage V - 1200 V RRM DC Blocking Voltage V T = 25 C 1200 V R J T = 25 C 28/56 C Continuous Forward Current I T = 135 C 13.5/27 A F C (Per Leg/Device) T = 151 C 10/20 C Non-Repetitive Forward Surge Current (Per Leg) I T = 25 C, T = 10 ms, Half sine pulse 80 A FSM C P T = 25 C 136/272 Power Dissipation C P W Tot (Per Leg/Device) T = 110 C 59/118 C Operating Junction Temperature T - -55 to 175 C J Storage Temperature T - -55 to 150 C STG Soldering Temperature T - 260 C sold 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/07/20GEN2 SiC Schottky Diode LSIC2SD120E20CC, 1200 V, 20 A, TO-247-3L Electrical Characteristics (Per Leg) Value Characteristics Symbol Conditions Unit Min. Typ. Max. I = 10 A, T = 25 C - 1.5 1.8 F J Forward Voltage V V F I = 10 A, T = 175 C - 2.2 - F J V = 1200 V , T = 25 C - <1 100 R J Reverse Current I A R V = 1200 V , T = 175 C - 10 R J V = 1 V, f =1 MHz - 582 - R Total Capacitance C V = 400 V, f = 1 MHz - 53 - pF R V = 800 V, f = 1 MHz - 40 - R V R Total Capacitive Charge Q V = 800 V, Q = C(V)dV - 57 - nC C R c 0 Footnote: T = +25 C unless otherwise specified J Thermal Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. Thermal Resistance (Per Device/Leg) R - - 1.10/0.55 - C/W JC Figure 1: T ypical Foward Characteristics (Per Leg) Figure 2: T ypical Reverse Characteristics (Per Leg) 20 -4 18 T = -55C J T = 25 C J 16 T = 125C J 1E -5 14 T = 150C J T = 175C J 12 10 1E -6 T = 175 C J 8 T = 150 C J 6 1E -7 T = 125 C J 4 T = 25 C J 2 1E -8 0 0200 400 600 80010001200 -0.5 0.51.5 2.53.5 4.5 Reverse Voltage, V (V) R Forward Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/07/20 1E Forward Current (A) Reverse Current, I (A) R