Thyristors Datasheet MAC12HCDG, MAC12HCMG, MAC12HCNG Surface Mount 400V - 800V RoHS Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers or wherever fullwave, silicon gatecontrolled devices are needed. Features Uniform Gate Trigger Currents High Surge Current Capability in Three Quadrants, Q1, Q2, 100 Amperes and Q3 Industry Standard TO-220AB High Commutating di/dt and Package for Ease of Design High Immunity to Glass Passivated Junctions dv/dt 125C for Reliability and Uniformity Minimizes Snubber Networks These Devices are PbFree Additional Information for Protection and are RoHS Compliant Blocking Voltage to 800 Volts On-State Current Rating of 12 Amperes RMS at 80C Functional Diagram Resources Accessories Samples Pin Out MT 2 MT 1 G CASE 221A STYLE 4 1 2 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 02/10/21Thyristors Datasheet MAC12HCDG, MAC12HCMG, MAC12HCNG Surface Mount 400V - 800V Maximum Ratings (TJ = 25C unless otherwise noted) Rating Symbol Value Unit MAC12HCDG 400 Peak Repetitive Off-State Voltage (Note 1) V , DRM MAC12HCMG 600 V (Gate Open, Sine Wave 50 to 60 Hz, T = 40 to 125C) V J RRM MAC12HCNG 800 On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 80C) I 12 A C T (RMS) Peak Non-Repetitive Surge Current I 100 A TSM (One Full Cycle Sine Wave, 60 Hz, T = 125C) C 2 Circuit Fusing Consideration (t = 8.3 ms) I t 41 Asec Peak Gate Power (Pulse Width 1.0 s, T = 80C) P 16 W C GM Average Gate Power (t = 8.3 ms, T = 80C) P 0.35 W C G(AV) Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM RRM shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit JunctiontoCase (AC) R 2.2 JC Thermal Resistance, C/W JunctiontoAmbient R 62.5 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 260 C L 10 seconds Electrical Characteristics - OFF (TJ = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit - - 0.01 Peak Repetitive Blocking Current T = 25C I , J DRM mA (V = V = V Gate Open) T = 125C I D DRM RRM J RRM - - 2.0 Electrical Characteristics - ON (TJ = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Max Unit Peak OnState Voltage (Note 2) (I = 17 A) V 1.85 V TM TM MT2(+), G(+) 10 50 Gate Trigger Current (Continuous dc) MT2(+), G() I 10 50 mA GT (V = 12 V, R = 100 ) D L MT2(), G() 10 50 Holding Current (V = 12 V, Gate Open, Initiating Current = 150 mA)) I 60 mA D H MT2(+), G(+) 60 Latching Current MT2(+), G() I 80 mA L (V = 12 V, I = 50 mA) D G MT2(), G() 60 MT2(+), G(+) 0.5 1.5 Gate Trigger Voltage MT2(+), G() V 0.5 1.5 V GT (V = 12 V, R = 100 ) D L MT2(), G() 0.5 1.5 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 02/10/21