Thyristors Datasheet MAC15 Series TRIAC 400V - 800V RoHS Pb Description Designed primarily for full-wave ac control applications, such as solidstate relays, motor controls, heating controls and power supplies or wherever fullwave silicon gate controlled solidstate devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. Features Blocking Voltage to 800 V Gate Triggering Guaranteed in Three Modes (MAC15 Series) All Diffused and Glass or Four Modes (MAC15A Passivated Junctions for Series) Greater Parameter Uniformity and Stability These Devices are PbFree and are RoHS Compliant Small, Rugged, Thermowatt Construction for Low Thermal Additional Information Resistance, High Heat Dissipation and Durability Pin Out Resources Accessories Samples Functional Diagram CASE 221A STYLE 4 MT 2 MT 1 1 G 2 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 03/08/21Thyristors Datasheet MAC15 Series TRIAC 400V - 800V Maximum Ratings (TJ = 25C unless otherwise noted) Rating Symbol Value Unit MAC15A6G 400 Peak Repetitive Off-State Voltage (Note 1) V , DRM MAC15-8G, MAC15A8G 600 V (Gate Open, Sine Wave 50 to 60 Hz, T = -40 to 125C) V J RRM MAC15-10G, MAC15A10G 800 On-State RMS Current (Full Cycle Sine Wave, 50 to 60 Hz, T = 80C) I 15 A C T (RMS) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, T = 80C) C I 150 A TSM Preceded and Followed by Rated Current Peak Gate Voltage V 10 V GM (Pulse Width 1.0 sec T = 90C) C 2 Circuit Fusing Consideration (t = 8.3 ms) I t 93 Asec Peak Gate Power P 20 W GM (T = 80C, Pulse Width = 1.0 s) C Peak Gate Current I 2.0 A GM (Pulse Width 1.0 sec T = 90C) C Average Gate Power (t = 8.3 ms, T = 80C) P 0.5 W C G (AV) Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM RRM shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit JunctiontoCase (AC) R 2.0 JC Thermal Resistance, C/W JunctiontoAmbient R 62.5 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T 260 C L Electrical Characteristics - OFF (TJ = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit - - 0.01 Peak Repetitive Blocking Current T = 25C I , J DRM mA (V = V = V Gate Open) T = 125C I - - 2.0 D DRM RRM J RRM Electrical Characteristics - ON (TJ = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak OnState Voltage (Note 2) (I = 21 A Peak) V - 1.3 1.6 V TM TM MT2(+), G(+) - - 50 Gate Trigger Current MT2(+), G() - - 50 (Continuous dc) I mA GT MT2(), G() - - 50 (V = 12 V, R = 100 ) D L MT2(), G(+) - - 75 MT2(+), G(+) - 0.9 2 Gate Trigger Voltage MT2(+), G() - 0.9 2 (Continuous dc) V V GT MT2(), G() - 1.1 2 (V = 12 V, R = 100 ) D L MT2(), G(+) - 1.4 2.5 MT2(+), G(+) 0.2 - - Gate NonTrigger Voltage MT2(+), G() 0.2 - - (T = 110C) V V J GD MT2(), G() 0.2 - - (V = 12 V, R = 100 ) D L MT2(), G(+) 0.2 - - Holding Current (V = 12 V , Gate Open, Initiating Current = 200 mA)) I - 6.0 40 mA D dc H Turn-On Time (VD = Rated VDRM, ITM = 17 A) tgt - 1.5 - s (IGT = 120 mA, Rise Time = 0.1 s, Pulse Width = 2 s) 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 03/08/21