MAC210A8, MAC210A10 Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies or wherever fullwave silicon gate controlled solidstate devices are needed. Triac type thyristors switch from a blocking to a conducting MAC210A8, MAC210A10 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance JunctiontoCase R 2.0 C/W JC R 62.5 JunctiontoAmbient JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current I , DRM (V = Rated V , V Gate Open) T = 25C I 10 A D DRM RRM J RRM T = +125C 2.0 mA J ON CHARACTERISTICS Peak On-State Voltage V 1.2 1.65 V TM (I = 14 A Peak Pulse Width = 1 to 2 ms, Duty Cycle 2%) TM Gate Trigger Current (Continuous dc) I mA GT (Main Terminal Voltage = 12 Vdc, R = 100 Ohms) L MT2(+), G(+) 12 50 MT2(+), G() 12 50 MT2(), G() 20 50 MT2(), G(+) 35 75 Gate Trigger Voltage (Continuous dc) V V GT (Main Terminal Voltage = 12 Vdc, R = 100 ) L 0.9 2.0 MT2(+), G(+) 0.9 2.0 MT2(+), G() 1.1 2.0 MT2(), G() MT2(), G(+) 1.4 2.5 Gate NonTrigger Voltage (Continuous dc) V 0.2 V GD (Main Terminal Voltage = 12 V, R = 100 , T = +125C) All Four Quadrants L J Holding Current I 6.0 50 mA H (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 200 mA, T = +25C) C Turn-On Time t 1.5 s gt (Rated V , I = 14 A) DRM TM (I = 120 mA, Rise Time = 0.1 s, Pulse Width = 2 s) GT DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage dv/dt(c) 5.0 V/ s (V = Rated V , I = 14 A, Commutating di/dt = 5.0 A/ms, D DRM TM Gate Unenergized, T = 70C) C Critical Rate of Rise of Off-State Voltage dv/dt 100 V/ s (V = Rated V , Exponential Voltage Rise, D DRM Gate Open, T = +70C) C