X-On Electronics has gained recognition as a prominent supplier of MAC228A6G Triacs across the USA, India, Europe, Australia, and various other global locations. MAC228A6G Triacs are a product manufactured by Littelfuse. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

MAC228A6G Littelfuse

MAC228A6G electronic component of Littelfuse
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Part No.MAC228A6G
Manufacturer: Littelfuse
Category: Triacs
Description: Triacs Sensitive Gate
Datasheet: MAC228A6G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.1409 ea
Line Total: USD 3.14 
Availability - 2
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 3.1409
10 : USD 3.0722
50 : USD 3.0265
100 : USD 2.9805

   
Manufacturer
Product Category
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Hts Code
LoadingGif
 
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We are delighted to provide the MAC228A6G from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MAC228A6G and other electronic components in the Triacs category and beyond.

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MAC228A Series Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for industrial and consumer applications for fullwave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching applications. www.onsemi.com Features TRIACS Sensitive Gate Triggering in 3 Modes for AC Triggering on 8 AMPERES RMS Sinking Current Sources 200 800 VOLTS Four Mode Triggering for Drive Circuits that Source Current All Diffused and GlassPassivated Junctions for Parameter Uniformity and Stability MT2 MT1 Small, Rugged, Thermowatt Construction for Low Thermal G Resistance and High Heat Dissipation Center Gate Geometry for Uniform Current Spreading 4 These Devices are PbFree and are RoHS Compliant* 1 2 3 TO220 CASE 221A STYLE 4 MARKING DIAGRAM MAC228AxxG AYWW xx = 4, 6, 8, or 10 A = Assembly Location (Optional)* Y = Year WW = Work Week G = PbFree Package * The Assembly Location code (A) is optional. In cases where the Assembly Location is stamped on the package the assembly code may be blank. *For additional information on our PbFree strategy and soldering details, please ORDERING INFORMATION download the ON Semiconductor Soldering and Mounting Techniques See detailed ordering and shipping information in the package Reference Manual, SOLDERRM/D. dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 8 MAC228A/DMAC228A Series MAXIMUM RATINGS (T = 25C unless otherwise noted) J Characteristic Symbol Value Unit , Peak Repetitive OffState Voltage (Note 1) V V DRM, (T = 40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) MAC228A4 V 200 J RRM MAC228A6 400 MAC228A8 600 MAC228A10 800 On-State RMS Current, (T = 80C) Full Cycle Sine Wave 50 to 60 Hz I 8.0 A C T(RMS) Peak NonRepetitive Surge Current I 80 A TSM (One Full Cycle Sine Wave, 60 Hz, T = 110C) J 2 2 Circuit Fusing Considerations, (t = 8.3 ms) I t 26 A s I 2.0 A Peak Gate Current, (t 2 s, T = 80C) C GM Peak Gate Voltage, (t 2 s, T = 80C) V 10 V C GM Peak Gate Power, (t 2 s, T = 80C) P 20 W C GM Average Gate Power, (t 8.3 ms, T = 80C) P 0.5 W C G(AV) Operating Junction Temperature Range T 40 to 110 C J Storage Temperature Range T 40 to 150 C stg Mounting Torque 8.0 in lb Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V and V for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such DRM RRM that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance JunctiontoCase R 2.0 C/W JC Thermal Resistance JunctiontoAmbient R 62.5 C/W JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current, (V = Rated V , V Gate Open) T = 25C I , 10 A D DRM RRM J DRM T = 110C I 2.0 J RRM mA ON CHARACTERISTICS Peak On-State Voltage, (I = 11 A Peak, Pulse Width 2 ms, Duty Cycle 2%) V 1.8 V TM TM Gate Trigger Current (Continuous DC), (V = 12 V, R = 100 ) I mA GT D L MT2(+), G(+) MT2(+), G() MT2(), G() 5.0 10 MT2(), G(+) Gate Trigger Voltage (Continuous DC), (V = 12 V, R = 100 ) V V GT D L MT2(+), G(+) MT2(+), G() MT2(), G() 2.0 2.5 MT2(), G(+) Gate NonTrigger Voltage (Continuous DC), (V = 12 V, T = 110C, R = 100 ) V 0.2 V GD D C L All Four Quadrants Holding Current, (V = 12 Vdc, Initiating Current = 200 mA, Gate Open) I 15 mA D H GateControlled TurnOn Time, (V = Rated V , I = 16 A Peak, I = 30 mA) t 1.5 s D DRM TM G gt DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage, dv/dt 25 V/ s (V = Rated V , Exponential Waveform, T = 110C) D DRM C Critical Rate of Rise of Commutation Voltage, (V = Rated V , I = 11.3 A, dv/dt(c) 5.0 V/ s D DRM TM Commutating di/dt = 4.1 A/ms, Gate Unenergized, T = 80C) C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

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