MAC228A Series Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for industrial and consumer applications for fullwave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching applications. www.onsemi.com Features TRIACS Sensitive Gate Triggering in 3 Modes for AC Triggering on 8 AMPERES RMS Sinking Current Sources 200 800 VOLTS Four Mode Triggering for Drive Circuits that Source Current All Diffused and GlassPassivated Junctions for Parameter Uniformity and Stability MT2 MT1 Small, Rugged, Thermowatt Construction for Low Thermal G Resistance and High Heat Dissipation Center Gate Geometry for Uniform Current Spreading 4 These Devices are PbFree and are RoHS Compliant* 1 2 3 TO220 CASE 221A STYLE 4 MARKING DIAGRAM MAC228AxxG AYWW xx = 4, 6, 8, or 10 A = Assembly Location (Optional)* Y = Year WW = Work Week G = PbFree Package * The Assembly Location code (A) is optional. In cases where the Assembly Location is stamped on the package the assembly code may be blank. *For additional information on our PbFree strategy and soldering details, please ORDERING INFORMATION download the ON Semiconductor Soldering and Mounting Techniques See detailed ordering and shipping information in the package Reference Manual, SOLDERRM/D. dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 8 MAC228A/DMAC228A Series MAXIMUM RATINGS (T = 25C unless otherwise noted) J Characteristic Symbol Value Unit , Peak Repetitive OffState Voltage (Note 1) V V DRM, (T = 40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) MAC228A4 V 200 J RRM MAC228A6 400 MAC228A8 600 MAC228A10 800 On-State RMS Current, (T = 80C) Full Cycle Sine Wave 50 to 60 Hz I 8.0 A C T(RMS) Peak NonRepetitive Surge Current I 80 A TSM (One Full Cycle Sine Wave, 60 Hz, T = 110C) J 2 2 Circuit Fusing Considerations, (t = 8.3 ms) I t 26 A s I 2.0 A Peak Gate Current, (t 2 s, T = 80C) C GM Peak Gate Voltage, (t 2 s, T = 80C) V 10 V C GM Peak Gate Power, (t 2 s, T = 80C) P 20 W C GM Average Gate Power, (t 8.3 ms, T = 80C) P 0.5 W C G(AV) Operating Junction Temperature Range T 40 to 110 C J Storage Temperature Range T 40 to 150 C stg Mounting Torque 8.0 in lb Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V and V for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such DRM RRM that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance JunctiontoCase R 2.0 C/W JC Thermal Resistance JunctiontoAmbient R 62.5 C/W JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current, (V = Rated V , V Gate Open) T = 25C I , 10 A D DRM RRM J DRM T = 110C I 2.0 J RRM mA ON CHARACTERISTICS Peak On-State Voltage, (I = 11 A Peak, Pulse Width 2 ms, Duty Cycle 2%) V 1.8 V TM TM Gate Trigger Current (Continuous DC), (V = 12 V, R = 100 ) I mA GT D L MT2(+), G(+) MT2(+), G() MT2(), G() 5.0 10 MT2(), G(+) Gate Trigger Voltage (Continuous DC), (V = 12 V, R = 100 ) V V GT D L MT2(+), G(+) MT2(+), G() MT2(), G() 2.0 2.5 MT2(), G(+) Gate NonTrigger Voltage (Continuous DC), (V = 12 V, T = 110C, R = 100 ) V 0.2 V GD D C L All Four Quadrants Holding Current, (V = 12 Vdc, Initiating Current = 200 mA, Gate Open) I 15 mA D H GateControlled TurnOn Time, (V = Rated V , I = 16 A Peak, I = 30 mA) t 1.5 s D DRM TM G gt DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage, dv/dt 25 V/ s (V = Rated V , Exponential Waveform, T = 110C) D DRM C Critical Rate of Rise of Commutation Voltage, (V = Rated V , I = 11.3 A, dv/dt(c) 5.0 V/ s D DRM TM Commutating di/dt = 4.1 A/ms, Gate Unenergized, T = 80C) C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2