Thyristors Surface Mount 600V - 800V > MAC4DSM, MAC4DSN Pb MAC4DSM, MAC4DSN Description The MAC4DSM and MAC4DSN are designed for high volume, low cost, industrial and consumer applications such as motor control process control temperature, light and speed control. Features Small Size Surface Mount Epoxy Meets UL 94 V0 DPAK Package 0.125 in Passivated Die for ESD Ratings: Human Reliability and Uniformity Body Model, 3B > 8000 V Blocking Voltage to 800 V Machine Model, C > 400 V OnState Current Rating of 4.0 A RMS at 108C PbFree Packages are Available Low IGT 10 mA Maximum in 3 Quadrants High Immunity to dv/dt 50 V/s at 125C Pin Out Functional Diagram MT2 MT1 4 G TO-220AB Case 221 A Style 4 1 2 3 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BA.09/02/20Thyristors Surface Mount 600V - 800V > MAC4DSM, MAC4DSN Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit V , DRM Peak Repetitive Off-State Voltage (Note 1) MAC4DSM 600 V V RRM (Gate Open, Sine Wave 50 to 60 Hz, T = -40 to 110C) MAC4DSN 800 J On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 108C) I 4.0 A C T (RMS) Peak Non-Repetitive Surge Current I 40 A TSM (One Full Cycle Sine Wave, 60 Hz, T = 108C) C 2 Circuit Fusing Consideration (t = 8.3 msec) I t 6.6 Asec Peak Gate Current (Pulse Width 20 sec, T = 108C) I 4.0 A C GM Peak Gate Power (Pulse Width 10 sec, T = 108C) P 2.0 W C GM Peak Gate Voltage (Pulse Width 20 sec, T = 108C) V 5.0 V C GM Average Gate Power (t = 8.3 msec, T = 108C) P 1.0 W C G(AV) Operating Junction Temperature Range T -40 to +125 C J T -40 to +150 C Storage Temperature Range stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM RRM shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit JunctiontoCase (AC) R 3.5 JC Thermal Resistance JunctiontoAmbient R 88 C/W JA JunctiontoAmbient (Note 2) R 80 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 260 C L 10 seconds (Note 3) 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8 from case for 10 seconds. Electrical Characteristics - OFF (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit - - 0.01 Peak Repetitive Blocking Current T = 25C I , J DRM mA (V = V = V Gate Open) T = 125C I D DRM RRM J RRM - - 2.0 Electrical Characteristics - ON (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak OnState Voltage (Note 4) (I = 6.0 A) V 1.3 1.6 V TM TM MT2(+), G(+) 2.9 4.0 10 Gate Trigger Current MT2(+), G() 2.9 5.0 10 mA (Continuous dc) I GT (V = 12 V, R = 100 ) D L MT2(), G() 2.9 7.0 10 Holding Current (V = 12 V, Gate Open, Initiating Current = 200 mA)) I 2.0 5.5 1.5 mA D H MT2(+), G(+) 6.0 30 Latching Current MT2(+), G() I 10 30 mA L MT2(), G() 6.0 30 MT2(+), G(+) 0.5 0.7 1.3 Gate Trigger Voltage (Continuous dc) MT2(+), G() V 0.5 0.65 1.3 V GT (V = 12 V, R = 100 ) D L MT2(), G() 0.5 0.7 1.3 MT2(+), G(+) 0.2 0.4 Gate NonTrigger Voltage (T = 125C) MT2(+), G() V 0.2 0.4 V J GD (V = 12 V, R = 100 ) D L MT2(), G() 0.2 0.4 4. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BA.09/02/20