MAC8SDG, MAC8SMG, MAC8SNG Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave www.onsemi.com control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. TRIACS 8 AMPERES RMS Features 400 thru 800 VOLTS Sensitive Gate Allows Triggering by Microcontrollers and other Logic Circuits MT2 MT1 Uniform Gate Trigger Currents in Three Quadrants Q1, Q2, and Q3 G High Immunity to dv/dt 25 V/ s Minimum at 110C High Commutating di/dt 8.0 A/ms Minimum at 110C MARKING Maximum Values of I , V and I Specified for Ease of Design DIAGRAM GT GT H OnState Current Rating of 8 Amperes RMS at 70C High Surge Current Capability 70 Amperes Blocking Voltage to 800 Volts MAC8SxG Rugged, Economical TO220 Package AYWW These Devices are PbFree and are RoHS Compliant* TO220 1 CASE 221A 2 3 STYLE 4 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit x = D, M, or N Peak Repetitive OffState Voltage (Note 1) V V DRM, A = Assembly Location (T = 40 to 110C, V J RRM Y = Year Sine Wave, 50 to 60 Hz, Gate Open) WW = Work Week MAC8SD 400 G = PbFree Package MAC8SM 600 MAC8SN 800 On-State RMS Current I 8.0 A T(RMS) PIN ASSIGNMENT (Full Cycle Sine Wave, 60 Hz, T = 70C) C 1 Main Terminal 1 Peak Non-Repetitive Surge Current I 70 A TSM 2 Main Terminal 2 (One Full Cycle Sine Wave, 60 Hz, T = 110C) J 3 Gate 2 2 Circuit Fusing Consideration (t = 8.3 ms) I t 20 A sec 4 Main Terminal 2 Peak Gate Power P 16 W GM (Pulse Width 1.0 s, T = 70C) C ORDERING INFORMATION Average Gate Power P 0.35 W G(AV) Device Package Shipping (t = 8.3 ms, T = 70C) C MAC8SDG TO220 50 Units / Rail Operating Junction Temperature Range T 40 to +110 C J (PbFree) Storage Temperature Range T 40 to +150 C stg MAC8SMG TO220 50 Units / Rail (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be MAC8SNG TO220 50 Units / Rail assumed, damage may occur and reliability may be affected. (PbFree) 1. V and V for all types can be applied on a continuous basis. Blocking DRM RRM voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 6 MAC8S/DMAC8SDG, MAC8SMG, MAC8SNG THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, C/W JunctiontoCase R 2.2 JC JunctiontoAmbient R 62.5 JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (V = Rated V , V Gate Open) mA D DRM RRM T = 25C I , 0.01 J DRM T = 110C I 2.0 J RRM ON CHARACTERISTICS Peak On-State Voltage (Note ) (I = 11A) V 1.85 V TM TM Gate Trigger Current (Continuous dc) (V = 12 V, R = 100 ) I mA D L GT MT2(+), G(+) 2.0 5.0 MT2(+), G() 3.0 5.0 MT2(), G() 3.0 5.0 Holding Current (V = 12V, Gate Open, Initiating Current = 150mA) I 3.0 10 mA D H Latching Current (V = 24V, I = 5mA) I mA D G L MT2(+), G(+) 5.0 15 MT2(), G() 10 20 MT2(+), G() 5.0 15 Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100 ) V V D L GT MT2(+), G(+) 0.45 0.62 1.5 MT2(+), G() 0.45 0.60 1.5 MT2(), G() 0.45 0.65 1.5 DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current di/dt 8.0 10 A/ms (c) V = 400 V, I = 3.5 A, Commutating dv/dt = 10 V /sec, D TM Gate Open, T = 110C, f = 500 Hz, Snubber: C = 0.01 F, J S R =15 , (See Figure 16) S Critical Rate of Rise of Off-State Voltage dv/dt 25 75 V/ s (V = Rate V , Exponential Waveform, R = 510 , T = 110C) D DRM GK J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. www.onsemi.com 2