MAC9DG, MAC9MG, MAC9NG Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications www.onsemi.com where high noise immunity and high commutating di/dt are required. TRIACS Features 8 AMPERES RMS Blocking Voltage to 800 Volts 400 thru 800 VOLTS OnState Current Rating of 8.0 Amperes RMS at 100C Uniform Gate Trigger Currents in Three Quadrants MT2 MT1 High Immunity to dv/dt 500 V/ s minimum at 125C G Minimizes Snubber Networks for Protection Industry Standard TO220 Package MARKING High Commutating di/dt 6.5 A/ms minimum at 125C DIAGRAM These Devices are PbFree and are RoHS Compliant* MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit MAC9xG AYWW Peak Repetitive OffState Voltage (Note 1) V V DRM, (T = 40 to 125C, Sine Wave, V TO220 J RRM 1 50 to 60 Hz, Gate Open) CASE 221A 2 MAC9D 400 3 STYLE 4 MAC9M 600 MAC9N 800 x = D, M, or N A = Assembly Location On-State RMS Current I 8.0 A T(RMS) Y = Year (Full Cycle Sine Wave, 60 Hz, T = 100C) C WW = Work Week Peak Non-Repetitive Surge Current I 80 A G = PbFree Package TSM (One Full Cycle Sine Wave, 60 Hz, T = 125C) J PIN ASSIGNMENT 2 2 Circuit Fusing Consideration (t = 8.3 ms) I t 26 A sec 1 Main Terminal 1 Peak Gate Power P 16 W GM 2 Main Terminal 2 (Pulse Width 1.0 s, T = 80C) C 3 Gate Average Gate Power P 0.35 W G(AV) (t = 8.3 ms, T = 80C) C 4 Main Terminal 2 Operating Junction Temperature Range T 40 to +125 C J ORDERING INFORMATION Storage Temperature Range T 40 to +150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be MAC9DG TO220 50 Units / Rail assumed, damage may occur and reliability may be affected. (PbFree) 1. V and V for all types can be applied on a continuous basis. Blocking DRM RRM voltages shall not be tested with a constant current source such that the MAC9MG TO220 50 Units / Rail voltage ratings of the devices are exceeded. (PbFree) MAC9NG TO220 50 Units / Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 4 MAC9/DMAC9DG, MAC9MG, MAC9NG THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, C/W JunctiontoCase R 2.2 JC JunctiontoAmbient R 62.5 JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current I , mA DRM (V = Rated V , V Gate Open) I D DRM RRM RRM T = 25C 0.01 J T = 125C 2.0 J ON CHARACTERISTICS Peak On-State Voltage (Note 2) V 1.2 1.6 V TM (I = 11 A Peak) TM Gate Trigger Current (Continuous dc) (V = 12 V, R = 100 ) I mA D L GT MT2(+), G(+) 10 16 50 MT2(+), G() 10 18 50 10 22 50 MT2(), G() Holding Current I 30 50 mA H (V = 12 V, Gate Open, Initiating Current = 150 mA) D Latching Current (V = 24 V, I = 50 mA) I mA D G L MT2(+), G(+) MT2(), G() 20 50 MT2(+), G() 30 80 Gate Trigger Voltage (V = 12 V, R = 100 ) V V D L GT 0.5 0.69 1.5 MT2(+), G(+) MT2(+), G() 0.5 0.77 1.5 MT2(), G() 0.5 0.72 1.5 Gate NonTrigger Voltage (V = 12 V, R = 100 , T = 125C) V V D L J GD MT2(+), G(+) MT2(+), G() MT2(), G() 0.2 DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current See Figure 10. (di/dt) 6.5 A/ms c (V = 400 V, I = 4.4 A, Commutating dv/dt = 18 V/ s, D TM Gate Open, T = 125C, f = 250 Hz, No Snubber) J C = 10 F L L = 40 mH L Critical Rate of Rise of Off-State Voltage dv/dt 500 V/ s (V = Rated V , Exponential Waveform, Gate Open, T = 125C) D DRM J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. www.onsemi.com 2