NYC226STT1G Littelfuse

NYC222STT1G, NYC226STT1G, NYC228STT1G Sensitive Gate Silicon Controlled Rectifiers NYC222STT1G, NYC226STT1G, NYC228STT1G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient PCB Mounted R 156 C/W JA Thermal Resistance, Junction toTab Measured on MT2 Tab Adjacent to Epoxy R 25 C/W JT Maximum Device Temperature for T 260 C L Soldering Purposes for 10 Secs Maximum ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current I , I DRM RRM (V = Rated V /V R = 1000 )T = 25C 10 A AK DRM RRM GK C T = 110C 200 A C ON CHARACTERISTICS Peak Forward On State Voltage (Note 2) V 1.2 1.7 V TM (I = 2.2 A Peak) TM Gate Trigger Current (dc) (Note 3) T = 25C I 30 200 A C GT (V = 7 Vdc, R = 100 )T = 40C AK L C 500 Gate Trigger Voltage (dc) (Note 3) T = 25C V 0.8 V C GT (V = 7 Vdc, R = 100 )T = 40C 1.2 AK L C Gate Non Trigger Voltage V 0.1 V GD (V = V , R = 100 )T = 110C AK DRM L C Holding Current I mA H (V = 12 V, R = 1000 )T = 25C 2.0 5.0 AK GK C Initiating Current = 200 mA T = 40C 10 C DYNAMIC CHARACTERISTICS Critical Rate of Rise of OffState Voltage dv/dt 25 V/ s (T = 110C) C 2. Pulse Width =1.0 ms, Duty Cycle 1%. 3. R Current not included in measurement. GK Voltage Current Characteristic of SCR + Current Anode + V Symbol Parameter TM V Peak Repetitive Off State Forward Voltage DRM on state I Peak Forward Blocking Current DRM I H I at V RRM RRM V Peak Repetitive Off State Reverse Voltage RRM I Peak Reverse Blocking Current RRM V Peak on State Voltage TM + Voltage I Holding Current H I at V Reverse Blocking Region DRM DRM (off state) Forward Blocking Region (off state) Reverse Avalanche Region Anode