SIDACtor Device SIDACtor Device TO-92 SIDACtor solid state protection devices protect telecommunications equipment such as modems, line cards, fax machines, and other CPE. SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968-A (formerly known as FCC Part 68) . Electrical Parameters Part V V V I I I I C DRM S T DRM S T H O Number * Volts Volts Volts Amps mAmps Amps mAmps pF P0080E 6 25 4 5 800 2.2 50 100 P0300E 25 40 4 5 800 2.2 50 110 P0640E 58 77 4 5 800 2.2 150 50 P0720E 65 88 4 5 800 2.2 150 50 P0900E 75 98 4 5 800 2.2 150 50 P1100E 90 130 4 5 800 2.2 150 40 P1300E 120 160 4 5 800 2.2 150 40 P1500E 140 180 4 5 800 2.2 150 40 P1800E 170 220 4 5 800 2.2 150 30 P2300E 190 260 4 5 800 2.2 150 30 P2600E 220 300 4 5 800 2.2 150 30 P3100E 275 350 4 5 800 2.2 150 30 P3500E 320 400 4 5 800 2.2 150 30 * For individual EA, EB, and EC surge ratings, see table below. General Notes: All measurements are made at an ambient temperature of 25 C. I applies to -40 C through +85 C temperature range. PP I is a repetitive surge rating and is guaranteed for the life of the product. PP Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities. V is measured at I DRM DRM. V is measured at 100 V/s. S Special voltage (V and V ) and holding current (I ) requirements are available upon request. S DRM H Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias and is a typical value for EA and EB product. EC capacitance O is approximately 2x the listed value. The off-state capacitance of the P0080EB is equal to the EC device. Surge Ratings I I I I I I PP PP PP PP PP TSM 2x10 s 8x20 s 10x160 s 10x560 s 10x1000 s 60 Hz di/dt Series Amps Amps Amps Amps Amps Amps Amps/s A 150 150 90 50 45 20 500 B 250 250 150 100 80 30 500 C 500 400 200 150 100 50 500 SIDACtor Device Thermal Considerations Package Symbol Parameter Value Unit T Operating Junction Temperature Range -40 to +150 C J TO-92 T Storage Temperature Range -65 to +150 C S R Thermal Resistance: Junction to Ambient 90 C/W JA +I +I t = rise time to peak value r I IT t = decay time to half value T d Peak 100 Value I IS S I I HH Waveform = t x t r d II DRM DRM -V 50 -V +V +V Half Value V V T VDRM V T DRM V VS S 0 t t r d 0 t Time (s) -I -I V-I Characteristics t x t Pulse Wave-form r d 14 2.0 12 1.8 10 1.6 8 1.4 6 25 C 25 C 1.2 4 1.0 2 0.8 0 0.6 -4 0.4 -6 -40 -20 0 20 40 60 80 100 120 140 160 -8 Case Temperature (T ) C -40 -20 0 20 40 60 80 100 120 140 160 C Junction Temperature (T ) C J Normalized V Change versus Junction Temperature Normalized DC Holding Current versus Case Temperature S 2004 Littelfuse, Inc. 2 - 17