SIDACtor Device SIDACtor Device DO-214AA SIDACtor solid state protection devices protect telecommunications equipment such as modems, line cards, fax machines, and other CPE. SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968-A (formerly known as FCC Part 68). Electrical Parameters Part V V V I I I I C DRM S T DRM S T H O Number * Volts Volts Volts Amps mAmps Amps mAmps pF P0080S 6 25 4 5 800 2.2 50 100 P0220S 15 32 4 5 800 2.2 50 50 P0300S 25 40 4 5 800 2.2 50 110 P0640S 58 77 4 5 800 2.2 150 50 P0720S 65 88 4 5 800 2.2 150 50 P0900S 75 98 4 5 800 2.2 150 50 P1100S 90 130 4 5 800 2.2 150 40 P1300S 120 160 4 5 800 2.2 150 40 P1500S 140 180 4 5 800 2.2 150 40 P1800S 170 220 4 5 800 2.2 150 30 P2300S 190 260 4 5 800 2.2 150 30 P2600S 220 300 4 5 800 2.2 150 30 P3100S 275 350 4 5 800 2.2 150 30 P3500S 320 400 4 5 800 2.2 150 30 * For individual SA, SB, and SC surge ratings, see table below. General Notes: All measurements are made at an ambient temperature of 25 C. I applies to -40 C through +85 C temperature range. PP I is a repetitive surge rating and is guaranteed for the life of the product. PP Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities. V is measured at I DRM DRM. V is measured at 100 V/s. S Special voltage (V and V ) and holding current (I ) requirements are available upon request. S DRM H Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias and is a typical value for SA and SB product. SC capacitance O is approximately 2x the listed value. The off-state capacitance of the P0080SB is equal to the SC device. Surge Ratings I I I I I I PP PP PP PP PP TSM 2x10 s 8x20 s 10x160 s 10x560 s 10x1000 s 60 Hz di/dt Series Amps Amps Amps Amps Amps Amps Amps/s A 150 150 90 50 45 20 500 B 250 250 150 100 80 30 500 C 500 400 200 150 100 50 500 SIDACtor Device Thermal Considerations Package Symbol Parameter Value Unit DO-214AA T Operating Junction Temperature Range -40 to +150 C J T Storage Temperature Range -65 to +150 C S R Thermal Resistance: Junction to Ambient 90 C/W JA +I +I t = rise time to peak value r I IT T t = decay time to half value d Peak 100 Value I IS S I IH H Waveform = t x t r d II DRMDRM -V 50 -V +V+V Half Value V V VT VDRM DRM T V S V S 0 t t r d 0 t Time (s) -I -I V-I Characteristics t x t Pulse Wave-form r d 14 2.0 12 1.8 10 1.6 8 1.4 6 25 C 25 C 1.2 4 1.0 2 0.8 0 0.6 -4 0.4 -6 -40 -20 0 20 40 60 80 100 120 140 160 -8 Case Temperature (T ) C -40 -20 0 20 40 60 80 100 120 140 160 C Junction Temperature (T ) C J Normalized V Change versus Junction Temperature Normalized DC Holding Current versus Case Temperature S 2004 Littelfuse, Inc. 2 - 5