Two-chip MicroCapacitance (MC) SIDACtor Device RoHS This two-chip MicroCapacitance SIDACtor design provides a through-hole technology 1 protection solution. It is intended for telecom applications that do not require a balanced (T) 2 (G) solution. For primary protection applications, devices with higher holding current and 3 integrated failsafe options are available. (R) SIDACtor devices enable equipment to comply with various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968-A (formerly known as FCC Part 68). Electrical Parameters V V V V DRM S DRM S Volts Volts Volts Volts Part V I I I I T DRM S T H Number * Pins 1-2, 3-2 Pins 1-3 Volts Amps mAmps Amps mAmps P0302AAMCL 6 25 12 50 4 5 800 2.2 50 P0602AAMCL 25 40 50 80 4 5 800 2.2 50 V V V V DRM S DRM S Volts Volts Volts Volts Part V I I I I T DRM S T H Number * Pins 1-2, 3-2 Pins 1-3 Volts Amps mAmps Amps mAmps P0602ACMCL 25 40 50 80 4 5 800 2.2 50 P1402ACMCL 58 77 116 154 4 5 800 2.2 150 P1602ACMCL 65 95 130 190 4 5 800 2.2 150 P2202ACMCL 90 130 180 260 4 5 800 2.2 150 P2702ACMCL 120 160 240 320 4 5 800 2.2 150 P3002ACMCL 140 180 280 360 4 5 800 2.2 150 P3602ACMCL 170 220 340 440 4 5 800 2.2 150 P4202ACMCL 190 250 380 500 4 5 800 2.2 150 P4802ACMCL 220 300 440 600 4 5 800 2.2 150 P6002ACMCL 275 350 550 700 4 5 800 2.2 150 * L in part number indicates RoHS compliance. For non-RoHS compliant device, delete L from part number. For surge ratings, see table below. General Notes: All measurements are made at an ambient temperature of 25 C. I applies to -40 C through +85 C temperature range. PP I is a repetitive surge rating and is guaranteed for the life of the product. PP Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities. V is measured at I DRM DRM. V is measured at 100 V/s. S Special voltage (V and V ) and holding current (I ) requirements are available upon request. S DRM H Surge Ratings in Amps I PP 0.2x310 * 2x10 * 8x20 * 10x160 * 10x560 * 5x320 * 10x360 * 10x1000 * 5x310 * I TSM 0.5x700 ** 2x10 ** 1.2x50 ** 10x160 ** 10x560 ** 9x720 ** 10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz di/dt Amps Amps Amps Amps Amps Amps Amps Amps Amps Amps Amps/s A 20 150 150 90 50 75 75 45 75 20 500 C 50 500 400 200 150 200 175 100 200 50 500 * Current waveform in s ** Voltage waveform in s www.littelfuse.com 3 - 48 2006 Littelfuse Telecom Design Guide SeriesTwo-chip MicroCapacitance (MC) SIDACtor Device Thermal Considerations Package Symbol Parameter Value Unit T Operating Junction Temperature Range -40 to +150 C J Modified T Storage Temperature Range -65 to +150 C S TO-220 R Thermal Resistance: Junction to Ambient 50 C/W JA PIN 1 PIN 3 PIN 2 Capacitance Values pF pF Pin 1-2 / 3-2 Pin 1-3 Tip-Ground, Ring-Ground Tip-Ring Part Number MIN MAX MIN MAX P0302AAMCL 25 55 15 35 P0602AAMCL 15 35 10 20 P0602ACMCL 25 45 10 25 P1402ACMCL 40 60 20 35 P1602ACMCL 35 55 20 35 P2202ACMCL 45 70 25 40 P2702ACMCL 40 60 20 35 P3002ACMCL 35 55 20 35 P3602ACMCL 35 50 15 30 P4202ACMCL 30 50 15 30 P4802ACMCL 30 45 15 30 P6002ACMCL 30 45 15 25 Note: Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias. O Telecom Design Guide 2006 Littelfuse 3 - 49 www.littelfuse.com SIDACtor Devices