E3 TO-220 MT2 MT1 T Quadrac RoHS Internally Triggered Triacs (4 A to 15 A) E3 General Description Teccors Quadrac devices are triacs that include a diac trigger All Teccor triac and diac chips have glass-passivated junctions to mounted inside the same package. This device, developed by ensure long-term device reliability and parameter stability. Teccor, saves the user the expense and assembly time of buying Variations of devices in this data sheet are available for custom a discrete diac and assembling in conjunction with a gated triac. design applications. Consult the factory for more information. Also, the alternistor Quadrac device (QxxxxLTH) eliminates the need for a snubber network. The Quadrac device is a bidirectional AC switch and is gate con- trolled for either polarity of main terminal voltage. Its primary pur- pose is for AC switching and phase control applications such as speed controls, temperature modulation controls, and lighting controls where noise immunity is required. Features Triac current capacities range from 4 A to 15 A with voltage ranges from 200 V to 600 V. Quadrac devices are available in the RoHS Compliant TO-220 package. Glass-passivated junctions Electrically-isolated package The TO-220 package is electrically isolated to 2500 V rms from Internal trigger diac the leads to mounting surface. 4000 V rms is available on special order. This means that no external isolation is required, thus High surge capability up to 200 A eliminating the need for separate insulators and insulator-mount- High voltage capability 200 V to 600 V ing steps and saving dollars over hot tab devices. 2004 Littelfuse, Inc. E3 - 1 Quadrac Data Sheets Part No. Trigger Diac Specifications (TMT1) I V I V T(RMS) Isolated DRM DRM TM V V V I C BO BO BO T (5) (1) (1) (10) (1) (3) (7) (6) (6) (11) T MT1 MT2 mAmps Volts T = T = T = C C C TO-220 Volts Volts Volts Volts Amps Farads 25 C 100 C 125 C T = 25 C C See Package Dimensions section for variations. (12) MIN MAX MAX MAX MIN MAX MIN MAX MAX Q2004LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1 4A Q4004LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1 Q6004LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1 Q2006LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1 Q4006LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1 Q6006LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1 6A Q4006LTH 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1 Q6006LTH 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1 Q2008LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1 Q4008LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1 Q6008LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1 8A Q4008LTH 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1 Q6008LTH 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1 Q2010LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1 Q4010LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1 Q6010LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1 10 A Q4010LTH 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1 Q6010LTH 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1 Q2015LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1 Q4015LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1 Q6015LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1 15 A Q4015LTH 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1 Q6015LTH 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1 V Repetitive peak blocking voltage DRM Specific Test Conditions V Peak on-state voltage at maximum rated RMS current TM V Dynamic breakback voltage (forward and reverse) V Breakover voltage symmetry BO General Notes C Trigger firing capacitance T All measurements are made at 60 Hz with resistive load at an ambi- di/dt Maximum rate-of-change of on-state current ent temperature of +25 C unless otherwise specified. dv/dt Critical rate-of-rise of off-state voltage at rated V gate open DRM Operating temperature range (T ) is -40 C to +125 C. dv/dt(c) Critical rate-of-rise of commutation voltage at rated V J DRM and I commutating di/dt = 0.54 rated I /ms gate T(RMS) T(RMS) Storage temperature range (T ) is -40 C to +125 C. S unenergized Lead solder temperature is a maximum of +230 C for 10 seconds 2 I t RMS surge (non-repetitive) on-state current for period of 8.3 ms maximum 1/16 (1.59 mm) from case. for fusing The case temperature (T ) is measured as shown on dimensional C I Peak breakover current BO outline drawings. See Package Dimensions section of this I Peak off-state current gate open V = maximum rated value DRM DRM catalog. I Peak gate trigger current (10 s Max) GTM I Holding current gate open H Electrical Specification Notes I RMS on-state current, conduction angle of 360 T(RMS) (1) For either polarity of MT2 with reference to MT1 I Peak one-cycle surge TSM (2) See Figure E3.1 for I versus T . t Gate controlled turn-on time H C gt (3) See Figure E3.4 and Figure E3.5 for i versus v . T T V Breakover voltage (forward and reverse) BO (4) See Figure E3.9 for surge ratings with specific durations.