Thyristors EV Series 0.8 Amp Sensitive SCRs EV Series 1.5 Amp Sensitive SCRs RoHS S802ECS Description The S802ECS offers a high static dv/dt with a low turn off (tq) time. It is specifically designed for GFCI (Ground Fault Circuit Interrupter) and AFCI (Arc Fault Circuit Interrupter), RCD (Residual Current Device) and RCBO (Residual Current Circuit Breaker with Overload Protection) applications. All SCR junctions are glass-passivated to ensure long term reliability and parametric stability. Features Thru-hole packages Non-repetitive reverse surge peak off-state Surge cur rent voltage (V ) up to 900V capability < 20Amps RSM Main Features High dv/dt noise immunity Bloc king voltage ( V / V ) Impro ved turn-off time (t ) DRM RRM q Symbol Value Unit capability - up to 800V Sensitive gate for direct I 1.5 A Non-repetitive direct microprocessor interface T(RMS) surge peak off-state Halogen free and RoHS V /V 800 V DRM RRM voltage (V ) up to 1250V compliant DSM V (t = 50 s) 1250 V DSM p V (t = 50 s) 900 V RSM p I 20 to 100 A GT Schematic Symbol A G K * TO92 withGA pin output Absolute Maximum Ratings Symbol Parameter Value Unit I RMS on-state current (full sine wave) T = 52C 1.5 A T(RMS) C I Average on-state current T = 52C 0.9 A T(AV) C F= 50Hz 20 A Non repetitive surge peak on-state current I TSM (Sine half wave, T initial = 25C) J F= 60Hz 24 A 2 2 2 I t I t Value for fusing t = 10 ms F = 50 Hz 2 A s p di/dt Critical rate of rise of on-state current I = 10mA T = 125C 80 A/s G J I Peak Gate Current t = 20 s T = 125C 0.5 A GM p J P Average gate power dissipation T = 125C 0.2 W G(AV) J T Storage junction temperature range -40 to 150 C stg T Operating junction temperature range -40 to 125 C J S802ECS 2019 Littelfuse, Inc SxX8xSx Series Specifications are subject to change without notice. Revised: 09/04/19Thyristors EV Series 0.8 Amp Sensitive SCRs EV Series 1.5 Amp Sensitive SCRs Electrical Characteristics (T = 25C, unless otherwise specified) J Symbol Description Test Conditions Limit Value Unit MIN. 20 A V = 6V D I DC Gate Trigger Current GT R = 100 L MAX. 100 A V = 6V D V DC Gate Trigger Voltage MAX. 0.8 V GT R = 100 L I = 10A V Peak Reverse Gate Voltage MIN. 8 V GRM RG R = 1 K GK I Holding Current MAX. 3 mA H Initial Current = 20mA T = 125C J R =1 k MIN. 40 GK Critical Rate-of-Rise of V = 67% of V D DRM dv/dt V/s Off-State Voltage Exp. Waveform R =220 MIN. 250 GK V = 1/2 V D DRM R =1 k V Gate Non-Trigger Voltage MIN. 0.2 V GK GD T = 125C J I = 0.5A t Turn-Off Time MAX. 35 s T q I =10mA G t Turn-On Time P = 15sec TYP. 2.3 s gt W I = 1.6A(pk) T Static Characteristics (T = 25C, unless otherwise specified) J Symbol Description Test Conditions Limit Value Unit V Peak On-State Voltage 1.5A device I = 4A t = 380 s MAX. 1.6 V TM p TM V Threshold Voltage MAX 1.03 V T0 R Dynamic Resistance MAX 106 m D T = 25C MAX. 3 A J I / I Off-State Current, Peak Repetitive DRM RRM T = 125C MAX. 500 A J Thermal Resistances Symbol Description Test Conditions Value Unit 1 Junction to case (AC) I = 1.5A 35 C/W R T (RMS) th(JC) 1 Junction to ambient I = 1.5A 150 C/W R T (RMS) th(j-a) 1 60Hz AC resistive load condition, 100% conduction. S802ECS 2019 Littelfuse, Inc SxX8xSx Series Specifications are subject to change without notice. Revised: 09/04/19