TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) Lightning Surge Protection- SP3384NUTGSP2525NUTG RoHS Pb GREEN SP2525NUTG, 2.5V, 30A Diode Array Description The SP2525NUTG is a low-capacitance, TVS Diode Array designed to provide protection against ESD (electrostatic discharge), CDE (cable discharge events), EFT (electrical fast transients), and lightning induced surges for highspeed, differential data lines. Its packaged in a DFN package (3.0 x 2.0mm) and each device can protect up 4 nd channels up to 30A (IEC 61000-4- 5 2 edition,) and up to 30kV ESD (IEC 61000-4-2). The SP2525NUTG with its low capacitance and low clamping voltage makes it ideal for high-speed data interfaces such as 1GbE applications found in notebooks, switches, etc. Pinout Features ESD, IEC 61000-4-2, DFN-10 package is 30kV contact, 30kV air optimized for high-speed data line routing EFT, IEC 61000-4-4, 40A 10 9 8 7 6 (5/50ns) Provides protection for two differential data pairs Lightning, IEC 61000- nd (4 channels) up to 30A 4-5 2 edition, 30A (t =8/20s) Halogen free, Lead free P and RoHS compliant Low capacitance of 1.7pF 0V (TYP) Moisture Sensitivity Level (MSL -1) Low leakage current of 1 2 3 4 5 1nA (TYP) at 2.5V Note: PIN3 and PIN8 are same potential with GND Low operating and clamping voltage Top View Functional Block Diagram Applications 10/100/1000 Ethernet LVDS Interfaces WAN/LAN Equipment Integrated Magnetics Desktops, Servers and Smart TV Notebooks 2.5G/5G/10G Ethernet Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 11/18/19 NC GND NC GND NC GND NC TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) Lightning Surge Protection- SP3384NUTG SP2525NUTG Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 30 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR Notes: CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I = 1A 2.5 V RWM R Breakdown Voltage V I = 1mA 5.5 7.0 V BR R Reverse Leakage Current I V =2.5V 1 100 nA LEAK R Holding Voltage V I/O to GND 1.6 V HOLD 1 Clamp Voltage V I =30A, t =8/20s 9 11 V C PP p 2 Dynamic Resistance R TLP, t =100ns 0.14 DYN p IEC 61000-4-2 (Contact Discharge) 30 kV 1,3 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 1.7 2.5 pF I/O-GND Notes: 1Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) test setting : Std.TDR(50),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: start t1=70ns to end t2=90ns 3. Device stressed with ten non-repetitive ESD pulses. 8/20s Pulse Waveform Capacitance vs. Reverse Bias 110% 2.5 100% 90% 2.0 80% 70% 1.5 60% 50% 1.0 40% 0.5 30% 20% 0.0 10% 0.00.5 1.01.5 2.02.5 0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Bias Voltage (V) Time (s) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 11/18/19 Percent of I PP Capacitance (pF)