X-On Electronics has gained recognition as a prominent supplier of 2N3904 across the USA, India, Europe, Australia, and various other global locations. 2N3904 are a product manufactured by Magnatec. We provide cost-effective solutions for 2N3904, ensuring timely deliveries around the world.

2N3904 Magnatec

2N3904 electronic component of Magnatec
2N3904 Magnatec
2N3904 Unclassified
2N3904

Images are for reference only
See Product Specifications
Part No. 2N3904
Manufacturer: Magnatec
Category: Unclassified
Description: TRANSISTOR, NPN, TO-18
Datasheet: 2N3904 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3165 ea
Line Total: USD 1.58 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 5
Multiples : 1
5 : USD 0.3165
10 : USD 0.2348
100 : USD 0.1748
500 : USD 0.1507
1000 : USD 0.1332
5000 : USD 0.1081

   
Manufacturer
Product Category
Brand
Transistor Polarity
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic @ Vce Sat
Current Ic Continuous A Max
Current Ic Fall Time Measurement
Current Ic Hfe
Fall Time @ Ic
Full Power Rating Temperature
Gain Bandwidth Ft Min
Hfe Min
No. Of Transistors
Pin Configuration
Termination Type
Voltage Vcbo
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We are delighted to provide the 2N3904 from our Magnatec manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3904 and other electronic components in the Magnatec manufacturer and beyond.

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2N3904 SEME LAB GENERAL PURPOSE MECHANICAL DATA NPN TRANSISTOR Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) FEATURES SILICON PLANAR EPITAXIAL NPN TRANSISTOR CECC SCREENING OPTIONS 0.48 (0.019) 0.41 (0.016) HIGH SPEED SATURATED SWITCHING dia. 2.54 (0.100) Nom. 3 1 2 TO-18 METAL PACKAGE PIN 1 Emitter PIN 2 Base PIN 3 Collector ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) A V Collector Base Voltage 60V CBO V Collector Emitter Voltage 40V CEO V Emitter Base Voltage 6V EBO I Collector Current 200mA C P Total Device Dissipation T =25C 350mW D A Derate above 25C 3.33mW / C R Thermal Resistance Junction Ambient 300C/W JA q T , T Operating and Storage Temperature Range 55 to +175C STG J Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 7/00 E-mail: sales semelab.co.uk Website: 2N3904 SEME LAB ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) A Parameter Test Conditions Min. Typ. Max. Unit V Collector Emitter Breakdown Voltage I = 1mA I = 0 40 (BR)CEO* C B V Collector Base Breakdown Voltage I = 10mAI = 0 60 V (BR)CBO C E V Emitter Base Breakdown Voltage I = 10mAI = 0 6 (BR)EBO E C I Base Cut-off Current V = 30V 50 BL CE nA I Collector Emitter Cut-off Current V = 3V 50 CEX EB I = 10mA I = 1mA 0.2 C B V Collector Emitter Saturation Voltage V CE(sat) I = 50mA I = 5mA 0.3 C B I = 10mA I = 1mA 0.65 0.85 C B V Base Emitter Saturation Voltage V BE(sat)* I = 50mA I = 5mA 0.95 C B I = 0.1mA 40 C I = 1mA 70 C h DC Current Gain V = 1V I = 10mA 100 300 FE* CE C I = 50mA 60 C I = 100mA 30 C * Pulse Test: t 300ms, d 2%. p SMALL SIGNAL CHARACTERISTICS (T = 25C unless otherwise stated) A Parameter Test Conditions Min. Typ. Max. Unit V = 20V I = 10mA CE C f Current Gain Bandwidth Product 300 MHz t f = 100MHz V = 5V I = 0 CB E C Output Capacitance 4 pF ob f = 1MHz V = 0.5V I = 0 BE C C Input Capacitance 8 pF ib f = 1MHz h Input Impedance 110 kW ie V = 10V CE h Output Admittance 140 mhmos oe I = 1mA C -4 h Voltage Feedback Ratio 0.5 8 x 10 re f = 1kHz h Small Signal Current Gain 100 400 fe V = 5V I = 100mA CE C N Noise Figure 5 dB F f = 1kHz R = 1kW S SWITCHING CHARACTERISTICS (T = 25C unless otherwise stated) A Parameter Test Conditions Min. Typ. Max. Unit t Delay Time V = 3V V = 0.5V 35 d CC BE t Rise Time I = 10mA I = 1mA 35 r C B1 ns t Storage Time V = 3V V = 0.5V 200 s CC BE t Fall Time I = I = 1mA 50 f B1 B2 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 7/00 E-mail: sales semelab.co.uk Website:

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