SP6661 High Frequency 200mA Charge Pump Inverter or Doubler FEATURES Inverts or Doubles Input Supply Voltage 1 8 92% Power Efficiency at 100mA SP6661 2 7 120kHz/900kHz Selectable Oscillator Fre- 3 6 quency 8 Pin MSOP 4 5 4.5 Output Resistance Using 3.3F Ceramic Caps Low Voltage Battery Operation Ideal for 3.6V Lithium Ion Battery or 5.0V Input Now Available in Lead Free Packaging High Output Current 200mA Low Profile Solution Pin-Compatible High-Current Upgrade 1.5V Inverter Startup Guaranteed of the ICL7660 and 660 Industry Standard Smallest Package Available for the 660 Industry Standard 8 pin MSOP DESCRIPTION The SP6661 is a CMOS DC-DC Monolithic Voltage Converter that can be implemented as a Voltage Inverter or a Positive Voltage Doubler. As a Voltage Inverter, a -1.5V to -5.0V output can be converted from a +1.5V to +5.0V input. As a Voltage Doubler, a +5.0V to +10.0V output can be provided from a +2.5V to +5.0V input. The SP6661 is ideal for both battery-powered and board level voltage conversion applications with a typical operating current of 3mA and a high efficiency (>90%) over most of its load-current range. Typical end products for this device are disk drive supplies, operational amplifier and interface power supplies, medical instruments, and hand held and laptop computers. The SP6661 is available in 8-pin NSOIC, and SOIC packages. TYPICAL APPLICATIONS CIRICUIT +VIN +2.5V to +5.0V +VIN C3 +1.5V to +5.0V 1F to 22F +V FC 1 DOUBLE 8 +V NEGATIVE FC 1 8 VOLTAGE C3 OUTPUT OSC CAP+ 1F to 22F 7 2 SP6661 CAP+ SP6661 7 OSC 2 C2 LV GND 1F to 22F 3 6 GND C1 3 LV 1F to 22F C1 6 1F to 22F INVERTED CAP- OUT NEGATIVE 4 5 VOLTAGE OUT OUTPUT CAP- 5 4 C2 1F to 22F Figure 1: Voltage Inverter Figure 2: Voltage Doubler Date: 09/16/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler Copyright 2004 Sipex Corporation 1ABSOLUTE MAXIMUM RATINGS These are stress ratings only and functional operation OUT and V+ Continuous Output Current.........200mA of the device at these ratings or any other above those Output Short-Circuit Duration to GND (Note 1).......1s indicated in the operation sections of the specifications Operating Temperature Ranges below is not implied. Exposure to absolute maximum SP6661E ...........................-40C to +85C rating conditions for extended periods of time may Continuous Power Dissipation (T = 70C) AMB affect reliability. NSOIC (derate 5.88mW/C above +70C).......471mW SOIC (derate 4.10mW/C above +70C)........330mW Power Supply Voltage Operating Temperature.......................-40C to +85C (V+ to GND or GND to OUT).............................+5.6V Storage Temperature........................-65C to +150C LV Input Voltages............(OUT - 0.3V) to (V+ + 0.3V) Lead Temperature (soldering 10s)..................+300C FC and OSC Input Voltages......The least negative of (OUT - 0.3V) or (V+ - 5.6V) to (V+ + 0.3V) ELECTRICAL CHARACTERISTICS P.ARAMETER M.INT.YPMSAXUSNIT CONDITION Inverter Circuit at Low Frequency with 22F Capacitors V+ = +5.0V, C1 = C2 = C3 = 22F, FC = open, LV = GND, T = T to T refer to Figure 1 test circuit. Note 2 AMB MIN MAX S5upply Voltage Range 13. 5V. R = 500 L S3tart-Up Voltage 0V.9 S3upply Current 6 mdA No Loa M0ax Output Current2A0 m O1scillator Input Current A O0scillator Frequency 70102 1z7 kH O5utput Resistance 7 I = 100mA, Note 3 L V0oltage Conversion Efficiency999.9%9. No Load P0ower Efficiency 8 89 I = 100mA L % 70 82 I = 200mA L Doubler Circuit at Low Frequency with 22F Capacitors V+ = +5.0V, C1 = C2 = C3 = 22F, FC = open, LV = GND, T = T to T refer to Figure 22 test circuit. Note 2 AMB MIN MAX S5upply Voltage Range 23. 5V. R = 1k L S5tart-Up Voltage 1V. S3upply Current 6 mdA No Loa M0ax Output Current2A0 m O1scillator Input Current A O0scillator Frequency 70102 1z7 kH O5utput Resistance 47. I = 100mA, Note 3 L V0oltage Conversion Efficiency999.9%9. No Load P9ower Efficiency 8 94 I = 100mA L % 79 90 I = 200mA L Date: 09/16/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler Copyright 2004 Sipex Corporation 2