SP691A/693A/800L/800M Low Power Microprocessor Supervisory with Battery Switch-Over FEATURES TOP VIEW Precision 4.65V/4.40V Voltage Monitoring VBATT 1 16 RESET 200ms Or Adjustable Reset Time VOUT 2 15 RESET 100ms, 1.6s Or Adjustable Watchdog Time Vcc 3 14 WDO 60A Maximum Operating Supply Current GND 4 13 CEIN 2.0A Maximum Battery Backup Current Corporation BATT ON 5 12 CEOUT 0.1A Maximum Battery Standby Current 6 LOWLINE 11 WDI Power Switching 7 10 OSCIN PFO 250mA Output in Vcc Mode (0.6) OSCSEL 8 9 PFI 25mA Output in Battery Mode (5) On-Board Gating of Chip-Enable Signals DIP/SO Memory Write-Cycle Completion Now Available in Lead Free Packaging 6ns CE Gate Propagation Delay Voltage Monitor for Power-Fail or Low Battery Backup-Battery Monitor RESET Valid to Vcc=1V 1% Accuracy Guaranteed (SP800L/800M) Pin Compatible Upgrade to MAX691A/693A/ 800L/800M DESCRIPTION The SP691A/693A/800L/800M is a microprocessor (P) supervisory circuit that integrates a myriad of components involved in discrete solutions to monitor power-supply and battery-control functions in P and digital systems. The SP691A/693A/800L/800M offers complete P monitoring and watchdog functions. The SP691A/693A/800L/800M is ideal for a low-cost battery management solution and is well suited for portable, battery-powered applications with its supply current of 35A. The 6ns chip-enable propagation delay, the 25mA current output in battery-backup mode, and the 250mA current output in standard operation also makes the SP691A/693A/800L/800M suitable for larger scale, high-performance equipment. P a r t N u m b e r R E S E T T h r e s h o l d R E S E T A c c u r a c y P F I A c c u r a c y Ba c k u p -B a t t e r y S w i t c h S P 6 9 1 A 4 . 6 5 V + 1 2 5 m V + 4 % YE S S P 6 9 3 A 4 . 4 0 V + 1 2 5 m V + 4 % YE S S P 8 0 0 L 4 . 6 5 V + 5 0 m V + 1 % YE S S P 8 0 0 M 4 . 4 0 V + 5 0 m V + 1 % YE S Date: 4/18/05 SP691A/693A/800L/800M Low Power Microprocessor Supervisor with Battery Switch-Over Copyright 2005 Sipex Corporation 1ABSOLUTE MAXIMUM RATINGS These are stress ratings only and functional operation Enhanced ESD Specifications........................+4kV Human Body Model of the device at these ratings or any other above those indicated in the operation sections of the specifications Power Dissipation Per Package O O 16-pin PDIP (derate 14.3mW/ C above +70 C).......................1150mW below is not implied. Exposure to absolute maximum O O 16-pin Narrow SOIC (derate 13.6mW/ C above 70 C)............1090mW rating conditions for extended periods of time may O O 16-pin Wide SOIC (derate 11.2mW/ C above 70 C).................900mW affect reliability. O O Storage Temperature....................................................-65 C to +150 C O Terminal Voltages (with respect to GND) Lead Temperature (soldering,10 sec).........................................+300 C V .......................................................................................-0.3V to +6V CC V .....................................................................................-0.3V to +6V BATT All Other Inputs........................................................-0.3V to (V +0.3V) CC Input Currents V Peak...........................................................................................1.0A CC V Continuous.............................................................................250mA CC V Peak....................................................................................250mA BATT V Continuous............................................................................25mA BATT GND, BATT ON............................................................................100mA All Other Inputs..............................................................................25mA ELECTRICAL CHARACTERISTICS V = +4.75V to +5.5V for the SP691A/800L, V = +4.5V to +5.5V for the SP693A/800M, V = +2.8V, and T = T to T unless otherwise CC CC BATT AMB MIN MAX O noted. Typical values apply at T =+25 C. AMB P A R A M E T E R S M I N . T Y P . M A X . U N I T S CO N D I T I O N S O p e r a t i n g V o l t a g e R a n g e , 0 5 . 5 V V o r V , N O T E 1 C C B A T T O u t p u t V o l t a g e , V V -0 . 0 5 V -0 . 0 1 5 V =4.5V, I =25mA OU T C C C C CC OUT in N o r m a l O p e r a t i n g M o d e V -0 . 3 V -0 . 1 5 V V =4.5V, I =250mA C C C C CC OUT V -0 . 2 V -0 . 0 9 V =3.0V, V =2.8V, I =100mA C C C C CC BATT OUT V -to-VOn-Resistance 0.6 1.2 V =4.5V CC OUT CC 0.9 2.0 V =3.0V CC Vin Battery-Backup ModeV -0.3 V -0.1 V =4.5V, I =20mA OUT BATT BATT BATT OUT V -0.25 V -0.07 V =2.8V, I =10mA BATT BATT V BATT OUT V -0.15 V -0.05 V =2.0V, I =5mA BATT BATT BATT OUT V -to-VOn-Resistance 5 15 V =4.5V BATT OUT BATT 7 25 V =2.8V BATT 10 30 V =2.0V BATT Supply Current in Normal 35 60 A V >(V -1V), excluding I CC BATT OUT Operating Mode, I Vcc Supply Current in Battery- A 0.001 2.0 V <(V -1.2V), V =2.8V, excluding I CC BATT BATT OUT Backup Mode, I , NOTE 2 BATT V Standby Current, I , BATT BATT -0.1 0.02 A V >(V +0.2V), excluding I CC BATT OUT NOTE 3 Battery Switchover ThresholdV +0.03 power-up BATT V V -0.03 power-down BATT Battery Switchover Hysteresis 60 mV Peak to Peak Date: 4/18/05 SP691A/693A/800L/800M Low Power Microprocessor Supervisor with Battery Switch-Over Copyright 2005 Sipex Corporation 2