1N3044BUR-1 Microchip

1N3016BUR-1 1N3045BUR-1 Qualified Levels: 1 Watt Surface Mount JAN, JANTX, and Available on JANTXV commercial Zener Diodes versions Qualified per MIL-PRF-19500/115 DESCRIPTION This surface mountable Zener diode series is similar to the 1N3016B-1 through 1N3045B-1 JEDEC registration in the DO-13 package except that it meets the surface mount DO-213AB outline. It is an ideal selection for applications of high density and low parasitic requirements. Due to its glass hermetic seal qualities and metallurgically enhanced internal construction, it is also well suited for high-reliability applications where it is available in JAN, JANTX, and JANTXV military qualifications. Lower voltages are also available in the 1N3821AUR-1 through 1N3828AUR-1 series (3.3 V to 7.5 V) in the same package (see separate data sheet). DO-213AB (MELF, Important: For the latest information, visit our website 1N3016BUR-1 1N3045BUR-1 MECHANICAL and PACKAGING CASE: Hermetically sealed glass MELF package. TERMINALS: Tin/lead or RoHS compliant matte-tin finished copper clad steel available (commercial grade only). Solderable per MIL-STD-750, method 2026. MARKING: Cathode band. POLARITY: Diode to be operated with the banded end positive with respect to the opposite end for Zener regulation. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately +6PPM/C. The COE of the Mounting Surface System should be selected to provide a suitable match with this device. TAPE & REEL optional: Standard per EIA-481-1-A with 12 mm tape. Consult factory for quantities. WEIGHT: Approximately 0.05 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N3016 B UR -1 e3 Reliability Level RoHS Compliance JAN = JAN level e3 = RoHS compliant (available JANTX = JANTX level on commercial grade only) Blank = non-RoHS compliant JANTXV = JANTXV level Blank = Commercial Metallurgically Bonded JEDEC type number (See Electrical Characteristics Surface Mount MELF Package table) Zener Voltage Tolerance B = 5% C = 2% D = 1% SYMBOLS & DEFINITIONS Symbol Definition I Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. R I , I , I Regulator Current: The dc regulator current (I ), at a specified test point (I ), near breakdown knee (I ). Z ZT ZK Z ZT ZK I Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating. ZM V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. F V Reverse Voltage: The reverse voltage dc value, no alternating component. R V Zener Voltage: The Zener voltage the device will exhibit at a specified current (I ) in its breakdown region. Z Z Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a Z or Z ZT ZK specified rms current modulation (typically 10% of I or I ) and superimposed on I or I respectively. ZT ZK ZT ZK T4-LDS-0285-1, Rev. 1 (4/22/13) 2013 Microsemi Corporation Page 2 of 5