1N3881R Microchip

1N3879 thru 1N3883R V = 50 V - 400 V RRM Silicon Fast I = 6 A F Recovery Diode Features High Surge Capability DO-4 Package Types up to 400 V V RRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions 1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit pppetitive peak reverse Re VV 5050 100100 200200 300300 400400 VV RRM voltage RMS reverse voltage V 35 70 140 210 280 V RMS V DC blocking voltage 50 100 200 300 400 V DC T 100 C Continuous forward current I 66 6 6 6 A C F Surge non-repetitive forward I T = 25 C, t = 8.3 ms 90 90 90 90 90 A F,SM C p current, Half Sine Wave Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 Storage temperature -55 to 150 -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions 1N3883 (R) Parameter Symbol 1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) Unit V = 6 A, T = 25 C Diode forward voltage I 1.4 1.4 1.4 1.4 1.4 V F F j V = 50 V, T = 25 C 15 R j 15 15 15 15 A I Reverse current R V = 50 V, T = 150 C 3 33 3 3 mA R j Recovery Time I =0.5 A, I =1.0 A, Maximum reverse recovery F R T 200 200 200 200 200 nS RR time I = 0.25 A RR Thermal characteristics Thermal resistance, junction R 2.5 2.5 2.5 2.5 2.5 C/W thJC - case 1 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/1N3879 thru 1N3883R 2 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/