1N5333B thru 1N5388B Available Silicon 5 Watt Zener Diodes DESCRIPTION The 1N5333B through 1N5388B JEDEC registered series of axial-leaded 5.0 watt Zeners provides a selection from 3.3 to 200 volts with different tolerances as identified by specific suffix letter on the part number. These plastic encapsulated Zeners have a moisture classification of Level 1 with no dry pack required. They may be operated at high maximum dc currents with adequate heat sinking due to their comparatively low thermal resistance design. Microsemi also offers numerous other Zener products to meet higher and lower power applications. Important: For the latest information, visit our website 1N5333B thru 1N5388B MECHANICAL and PACKAGING CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0. TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating solderable per MIL-STD-750, method 2026. MARKING: Part number. POLARITY: Cathode indicated by band. Diode to be operated with the banded end positive with respect to the opposite end. TAPE & REEL option: Standard per EIA-296 (add TR suffix to part number). Consult factory for quantities. WEIGHT: 0.7 grams. See Package Dimensions on last page. PART NOMENCLATURE 1N5334 B (e3) JEDEC type number RoHS Compliance (See Electrical Characteristics e3 = RoHS compliant table) Blank = non-RoHS compliant Zener Voltage Tolerance A = +/-10% B = +/-5% C = +/-2% SYMBOLS & DEFINITIONS Symbol Definition I Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. R I , I , I Regulator Current: The dc regulator current (I ), at a specified test point (I ), near breakdown knee (I ). Z ZT ZK Z ZT ZK I Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating. ZM I Maximum Zener Surge Current: The non-repetitive peak value of Zener surge current at a specified wave form. ZSM V Reverse Voltage: The reverse voltage dc value, no alternating component. R V Zener Voltage: The Zener voltage the device will exhibit at a specified current (I ) in its breakdown region. Z Z Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a Z or Z ZT ZK specified rms current modulation (typically 10% of I or I ) and superimposed on I or I respectively. ZT ZK ZT ZK T4-LDS-0246, Rev. 1 (120180) 2012 Microsemi Corporation Page 2 of 5