X-On Electronics has gained recognition as a prominent supplier of 1N5616JANTX/TR across the USA, India, Europe, Australia, and various other global locations. 1N5616JANTX/TR are a product manufactured by Microchip. We provide cost-effective solutions for 1N5616JANTX/TR, ensuring timely deliveries around the world.

1N5616JANTX/TR Microchip

Name: 1N5616JANTX/TR
Brand: Microchip
SKU: 1N5616JANTXTR_Microchip
Availability: OutOfStock
Rating: 5 (11 reviews)

1N5616JANTX/TR electronic component of Microchip

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Part No.	1N5616JANTX/TR
Manufacturer:	Microchip
Category:	Unclassified
Description:	Diode Standard Recovery 400V 1A 2-Pin Case A T/R
Datasheet:	1N5616JANTX/TR Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 6.052 ea
Line Total: USD 6.05

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

1N5616JANTX/TR More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 30 Dec to Fri. 03 Jan MOQ : 1 Multiples : 1	1 : USD 6.052

Specifications

Manufacturer Microchip Microchip
Product Category Unclassified Unclassified

We are delighted to provide the 1N5616JANTX/TR from our Microchip manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5616JANTX/TR and other electronic components in the Microchip manufacturer and beyond.

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Additional Infomation About Product

WWW.Microsemi .COM 1N5614 1N5622 1N5614 thru 1N5622 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS SCOTTSDALE DIVISION RECTIFIERS DESCRIPTION APPEARANCE This standard recovery rectifier diode series is military qualified to MIL-PRF- 19500/427 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless- glass construction using an internal Category I metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a US suffix (see separate data sheet for 1N5614US thru 1N5622US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and A Package ultrafast device types in both through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM 1N5614 1N5622 1N5614 thru 1N5622 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS SCOTTSDALE DIVISION RECTIFIERS SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current BR Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating V RWM temperature range Average Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave I O input and a 180 degree conduction angle Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current V F Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and I R temperature C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse t rr current occurs. GRAPHS FIGURE 1 FIGURE 2 TYPICAL FORWARD VOLTAGE vs FORWARD CURRENT TYPICAL REVERSE CURRENT vs PIV Copyright 2007 Microsemi Page 2 1-15-2007 REV C Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

HS Compliance

Tariff Desc

8541100050

AT9 may also be referenced as

ATM
Atmel
Atmel Wireless (VA)
M4S
M6S
M8S
M9S
MCP
Micrel
Micrel Inc
MICREL SEMICONDUCTOR
MICREL SYNERGY SEMI
MICROCHIP (ATMEL)
MICROCHIP (MICREL)
MICROCHIP (MICROSEMI)
MICROCHIP (SUPERTEX)
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Microchip / Vectron
Microchip Tech
MICROCHIP TECH.
Microchip Technology
Microchip Technology Micrel
Microchip Technology / Atmel
Microchip Technology / Micrel
MICROCHIPDIRECT
MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
Microsemi Commercial Components Group
MICROSEMI COMMUNICATIONS INC.
Microsemi Consumer Medical Product Group
Microsemi Corporation
Microsemi FTD
Microsemi Power Management Group
Microsemi Power Products Group
Microsemi SoC
MICROSEMI/LAWRENCE
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MSC
Roving Networks
ROVING NETWORKS INC
ROVING NETWORKS INC.
ROVING NETWORKS, INC.
Silicon Storage
SILICON STORAGE TECH
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Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi

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