1N5711UR-1JANTX/TR Microchip

1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents Qualified Levels: Schottky Barrier Diode JAN, JANTX, and Available on JANTXV commercial MELF Surface Mount versions Qualified per MIL-PRF-19500/444 DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications. This small diode is hermetically sealed and bonded into a DO-213AA glass package. Also included in this datasheet are Microsemis CDLL numbered variants of this series (military qualification grades not are not available for the CDLL prefix part numbers). DO-213AA (MELF) Package Important: For the latest information, visit our website 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents MECHANICAL and PACKAGING CASE: Hermetically sealed glass DO-213AA MELF (SOD-80, LL34) case package. TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per MIL-STD-750, method 2026. POLARITY: Cathode end is banded. MOUNTING: The axial coefficient of expansion (COE) of this device is approximately +6PPM/C. The COE of the mounting surface system should be selected to provide a suitable match with this device. MARKING: Part number. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: Approximately 0.2 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5711 UR -1 (e3) Reliability Level RoHS Compliance JAN = JAN level e3 = RoHS compliant (on JANTX = JANTX level commercial grade only) JANTXV = JANTXV level Blank = non-RoHS compliant Blank = Commercial grade Metallurgically Bonded JEDEC type number (see Electrical Characteristics MELF Surface Mount table) CDLL 2810 (e3) Microsemi Designation RoHS Compliance e3 = RoHS compliant Series number Blank = non-RoHS compliant (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. f frequency I Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the specified voltage V . R R Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave I O input and a 180 degree conduction angle. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from t rr the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. V (BR) Breakdown Voltage: A voltage in the breakdown region. V F Forward Voltage: A positive dc anode-cathode voltage the device will exhibit at a specified forward current. V Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region. R Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes V RWM known historically as PIV. T4-LDS-0040-1, Rev. 1 (6/4/13) 2013 Microsemi Corporation Page 2 of 7