1N6139AUS Microchip

1N6138AUS 1N6173AUS Qualified Levels: Voidless Hermetically Sealed Surface Mount JAN, JANTX, JANTXV Available on Bidirectional Transient Voltage Suppressors and JANS commercial Qualified to MIL-PRF-19500/516 versions DESCRIPTION This surface mount series of industry recognized voidless, hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) designs are military qualified to MIL-PRF-19500/516 and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a working peak standoff voltage selection from 5.2 to 152 volts with a 1500 watt rating for a 10/1000 us pulse. They are very robust in hard-glass construction and use internal Category 1 metallurgical bonds for high reliability. These are also available as both a non suffix part and an A version part involving different voltage tolerances as further described in the nomenclature section. These devices are also available in axial-leaded packages for thru-hole mounting. C or SQ-MELF Package Also available in: Important: For the latest information, visit our website 1N6138AUS 1N6173AUS MECHANICAL and PACKAGING CASE: Hermetically sealed voidless hard glass with tungsten slugs TERMINALS: Tin/lead plate over copper. RoHS compliant matte-tin is available on commercial grade only. MARKING: None POLARITY: No polarity marking for these bidirectional TVSs TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities. WEIGHT: Approximately 1100 milligrams See package dimensions on last page. PART NOMENCLATURE JAN 1N6138 A US e3 Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant JANS = JANS level Surface Mount Package Blank = commercial JEDEC type number Voltage Tolerance See Electrical Characteristics A = Standard table Blank =5% higher V , 5% lower C min. V and 5% lower I (BR) PP SYMBOLS & DEFINITIONS Symbol Definition Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in V(BR) temperature that caused it expressed in %/C or mV/C. V Breakdown Voltage: The voltage across the device at a specified current I in the breakdown region. (BR) (BR) Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that V WM may be continuously applied over the standard operating temperature. I Standby Current: The current through the device at rated stand-off voltage. D Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an V C impulse current (I ) for a specified waveform. PP Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The P PP impulse power is the maximum-rated value of the product of I and V . PP C T4-LDS-0278-1, Rev. 2 (11/19/13) 2013 Microsemi Corporation Page 2 of 7