X-On Electronics has gained recognition as a prominent supplier of 1N6628JANTX across the USA, India, Europe, Australia, and various other global locations. 1N6628JANTX are a product manufactured by Microchip. We provide cost-effective solutions for 1N6628JANTX, ensuring timely deliveries around the world.

1N6628JANTX Microchip

1N6628JANTX electronic component of Microchip
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Part No.1N6628JANTX
Manufacturer: Microchip
Category: Unclassified
Description: Diode Ultra Fast Recovery 600V 1.75A 2-Pin Case E Bag
Datasheet: 1N6628JANTX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 21.3206 ea
Line Total: USD 2132.06 
Availability - 0
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 100
Multiples : 100
100 : USD 21.3206

   
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We are delighted to provide the 1N6628JANTX from our Microchip manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N6628JANTX and other electronic components in the Microchip manufacturer and beyond.

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1N6626 thru 1N6631 WWW.Microsemi .COM 1N6626 thru 1N6631 VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS SCOTTSDALE DIVISION RECTIFIERS DESCRIPTION APPEARANCE This Ultrafast Recovery rectifier diode series is military qualified to MIL-PRF- 19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless- glass construction using an internal Category I metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a US suffix (see separate data sheet for 1N6626US thru 1N6631US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast E Package device types in both through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMIs website: 1N6626 thru 1N6631 WWW.Microsemi .COM 1N6626 thru 1N6631 VOIDLESS-HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS SCOTTSDALE DIVISION RECTIFIERS o ELECTRICAL CHARACTERISTICS @ 25 C TYPE MINIMUM MAXIMUM WORKING MAXIMUM MAXIMUM MAXIMUM PEAK FORWARD NUMBER BREAK- FORWARD PEAK REVERSE REVERSE REVERSE RECOVERY RECOVERY DOWN VOLTAGE REVERSE RECOVERY RECOVERY CURRENT VOLTAGE CURRENT I @ R VOLTAGE VOLTAGE TIME (LOW TIME (HIGH I (rec) V @ I V Max F F RM FRM V RWM V V CURRENT) CURRENT) I = 2 A, R RWM F I = 0.5 A F o o I = 50 A t t 100 A/ s R T =25 C T =150 C rr rr A A t = 12 ns r Note 2 Note 1 Note 2 V V @ A V @ A V ns ns A V A A 1N6626 220 1.35V @ 2.0 A 1.50V @ 4.0A 200 2.0 500 30 45 3.5 8 1N6627 440 1.35V @ 2.0 A 1.50V @ 4.0A 400 2.0 500 30 45 3.5 8 1N6628 660 1.35V @ 2.0 A 1.50V @ 4.0A 600 2.0 500 30 45 3.5 8 1N6629 880 1.40V @ 1.4 A 1.70V @ 3.0A 800 2.0 500 50 60 4.2 12 1N6630 990 1.40V @ 1.4 A 1.70V @ 3.0A 900 2.0 500 50 60 4.2 12 1N6631 1100 1.60V @ 1.4 A 1.95V @ 2.0A 1000 4.0 600 60 80 5.0 20 NOTE 1: Low Current Reverse Recovery Time Test Conditions: I =0.5A, I =1.0A, I = 0.25A per MIL-STD-750, F RM R(REC) Method 4031, Condition B. NOTE 2: High Current Reverse Recovery Time Test Conditions: I = 2 A, 100 A/s MIL-STD-750, Method 4031, F Condition D. SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. BR Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating V RWM temperature range. V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. F Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and I R temperature. C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak t rr reverse current is reached. CHARTS AND GRAPHS FIGURE 1 FIGURE 2 Typical Forward Current Typical Forward Current vs vs Forward Voltage Forward Voltage Copyright 2009 Microsemi Page 2 10-01-2009 REV F; SA7-57.pdf Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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