1N6638 Microchip

1N6638US, 1N6642US, 1N6643US Qualified Levels: VOIDLESS HERMETICALLY SEALED JAN, JANTX, Available on SWITCHING DIODES JANTXV and JANS commercial versions Qualified per MIL-PRF-19500/578 DESCRIPTION This popular surface mount equivalent JEDEC registered switching/signal diodes are military qualified and available with internal metallurgical bonded construction. These small low capacitance diodes with very fast switching speeds are hermetically sealed and bonded into a D-5D package. They may be used in a variety of fast switching applications including computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, as well as decoding or encoding applications, etc. Microsemi also offers a variety of other switching/signal diodes. Important: For the latest information, visit our website 1N6638US, 1N6642US, 1N6643US MECHANICAL and PACKAGING CASE: Voidless hermetically sealed hard glass. TERMINALS: Tin-Lead plate with >3% Lead. Solder dip is available upon request. MARKING: Body painted and alpha numeric. POLARITY: Cathode indicated by band. Tape & Reel option: Standard per EIA-481-1-A with 12 mm tape. Consult factory for quantities. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N6638 US (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant JANS = JANS Level Blank = commercial Surface Mount Package JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. BR Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature V RWM range. V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. F Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and I R temperature. C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from t the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is rr reached. o ELECTRICAL CHARACTERISTICS 25 C unless otherwise noted. MAXIMUM MAXIMUM DC REVERSE CURRENT REVERSE MAXIMUM MAXIMUM FORWARD RECOVERY FORWARD JUNCTION VOLTAGE TIME RECOVERY CAPACITANCE V I t VOLTAGE AND f = 1 MHz F F rr TYPE (Note 1) TIME Vsig = 50 mV NUMBER I I I I I =200mA, t =1ns (p-p) R1 R2 R3 R4 F r V = V =V V =20 V V =V R R RWM R R RWM 20 V T = T = t V =0 V V =1.5 V V A A FRM fr R R o o +150 C +150 C V mA V mA nA nA ns A A V ns pf pf 1N6638US 0.8 V 10 mA 1.1 V 200 mA 35 500 50 100 4.5 5.0 20 2.5 2.0 1N6642US 0.8 V 10 mA 1.2 V 100 mA 25 500 50 100 5.0 5.0 20 5.0 2.8 1N6643US 0.8 V 10 mA 1.2 V 100 mA 50 500 75 100 6.0 5.0 20 5.0 2.8 NOTE: 1. Reverse Recovery Time Test Conditions I =I =10 mA, I = 1.0 mA, C=3 pF, R = 100 ohms. F R R(REC) L T4-LDS-0218-1, Rev. 2 (11/07/14)(111513) 2014 Microsemi Corporation Page 2 of 5