X-On Electronics has gained recognition as a prominent supplier of 1N825E3 Zener Diodes across the USA, India, Europe, Australia, and various other global locations. 1N825E3 Zener Diodes are a product manufactured by Microchip. We provide cost-effective solutions for Zener Diodes, ensuring timely deliveries around the world.

1N825E3 Microchip

1N825E3 electronic component of Microchip
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Part No.1N825E3
Manufacturer: Microchip
Category: Zener Diodes
Description: Zener Diodes Temperature Compensated
Datasheet: 1N825E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
175: USD 6.071 ea
Line Total: USD 1062.42 
Availability - 0
MOQ: 175  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 7.0745
10 : USD 6.6558

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 175
Multiples : 1
175 : USD 6.071
175 : USD 6.0112

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2
Multiples : 1
2 : USD 5.3423

   
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We are delighted to provide the 1N825E3 from our Zener Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N825E3 and other electronic components in the Zener Diodes category and beyond.

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1N8211N829A-1 WWW.Microsemi .COM 1N821 thru 1N829A-1 DO-7 6.2 & 6.55 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION DESCRIPTION APPEARANCE The popular 1N821 thru 1N829 series of Zero-TC Reference Diodes DO-7 provides a selection of both 6.2 V and 6.55 V nominal voltages and o (DO-204AA) temperature coefficients to as low as 0.0005%/ C for minimal voltage change with temperature when operated at 7.5 mA. These glass axial- leaded DO-7 reference diodes are also available in JAN, JANTX, JANTXV, and JANS military qualifications. Microsemi also offers numerous other Zener Reference Diode products for a variety of other voltages up to 200 V. IMPORTANT: For the most current data, consult MICROSEMIs website: 1N8211N829A-1 WWW.Microsemi .COM 1N821 thru 1N829A-1 DO-7 6.2 & 6.55 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION o *ELECTRICAL CHARACTERISTICS @ 25 C, unless otherwise specified VOLTAGE MAXIMUM EFFECTIVE ZENER ZENER TEMPERATURE MAXIMUM ZENER TEMPERATURE VOLTAGE TEST STABILITY JEDEC REVERSE IMPEDANCE COEFFICIENT TYPE NUMBER (Note 1 and 4) CURRENT (V MAX) ZT (Note 2) CURRENT o o (Note 1, 5 & 6) V @ I I -55 C to +100 C Z ZT ZT VZ Z @ I ZT ZT I @ 3 V R (Note 3 and 4) o VOLTS mA OHMS A mV %/ C 1N821 5.9 6.5 7.5 15 2.0 96 0.01 1N821A 5.9 6.5 7.5 10 2.0 96 0.01 1N822 5.9 6.5 7.5 15 2.0 96 0.01 1N823 5.9 6.5 7.5 15 2.0 48 0.005 1N823A 5.9 6.5 7.5 10 2.0 48 0.005 1N824 5.9 6.5 7.5 15 2.0 48 0.005 1N825 5.9 6.5 7.5 15 2.0 19 0.002 1N825A 5.9 6.5 7.5 10 2.0 19 0.002 1N826 6.2 6.9 7.5 15 2.0 20 0.002 1N827 5.9 6.5 7.5 15 2.0 9 0.001 1N827A 5.9 6.5 7.5 10 2.0 9 0.001 1N828 6.2 6.9 7.5 15 2.0 10 0.001 1N829 5.9 6.5 7.5 15 2.0 5 0.0005 1N829A 5.9 6.5 7.5 10 2.0 5 0.0005 *JEDEC Registered Data. Double Anode; electrical specifications apply under both bias polarities. NOTES: 1. Add a -1 suffix for internal metallurgical bond. When ordering devices with tighter tolerances than specified for the V voltage nominal of Z 6.35 V, add a hyphened suffix to the part number for desired tolerance, e.g. 1N827-1-2%, 1N829-1-1%, 1N829A-1%, 1N829A-1-1%, etc. o 2. Zener impedance measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25 C. 3. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specified mV change at discrete temperature between the established limits. 4. Voltage measurements to be performed 15 seconds after application of dc current. 5. 1N821, 1N823, 1N825, 1N827, and 1N829 also have qualification to MIL-PRF-19500/159 by adding the JAN, JANTX, JANTXV, or JANS prefix to part numbers as well as the -1 suffix; e.g. JANTX1N827-1, JANTXV1N829-1, etc. 6. Designate Radiation Hardened devices with RH prefix instead of 1N, e.g. RH829A instead of 1N829A. GRAPHS The curve shown in Figure 1 is typical of the diode series and greatly simplifies the estimation of the Temperature Coefficient (TC) when the diode is operated at currents other than 7.5mA. EXAMPLE: A diode in this series is operated at a current of 7.5mA and has specified Temperature Coefficient (TC) limits of o +/-0.005%/ C. To obtain the typical Temperature Coefficient limits for this same diode operated at a current of 6.0mA, the o new TC limits (%/ C) can be estimated using the graph in FIGURE 1. At a test current of 6.0mA the change in Temperature Coefficient o (TC) is approximately 0.0006%. C. The algebraic sum of +/- o o 0.005% C and 0.0006%/ C gives the estimated limits of o o +0.0044%/ C and -0.0056%/ C. FIGURE 1 TYPICAL CHANGE OF TEMPERATURE COEFFICIENT WITH CHANGE IN OPERATING CURRENT. Copyright 2003 Microsemi Page 2 10-27-2003 REV C Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 o Change in temperature coefficient (%/ C) o Change in temperature coefficient (mV/ C)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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