1N935B-1 1N938B-1 Qualified Levels: Temperature Compensated JAN, JANTX, Available on Zener Reference Diodes JANTXV and JANS commercial versions Qualified per MIL-PRF-19500/156 DESCRIPTION The popular 1N935B-1 through 1N938B-1 series of Zero-TC (Temperature Compensated) reference diodes provides a selection of 9.0 V nominal voltages and temperature coefficients o to as low as 0.001 %/ C for minimal voltage change with temperature when operated at 7.5 mA. These glass axial-leaded DO-35 reference diodes are also available in JAN, JANTX, JANTXV and JANS military qualifications. For commercial applications it is also available as RoHS compliant. Important: For the latest information, visit our website 1N935B-1 1N938B-1 MECHANICAL and PACKAGING CASE: Hermetically sealed glass case. DO-35 (DO-204AH) package. TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating (commercial grade only) over copper clad steel. Solderable per MIL-STD-750, method 2026. MARKING: Part number and cathode band. POLARITY: Reference diode to be operated with the banded (cathode) end positive with respect to the opposite end. TAPE & REEL option: Standard per EIA-296 (add TR suffix to part number). Consult factory for quantities. WEIGHT: Approximately 0.2 grams. See package dimensions on last page. PART NOMENCLATURE JAN 1N935 B -1 e3 Reliability Level* RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant JANS = JANS Level * (available on B suffix only) Metallurgical Bond Blank = Commercial Temperature Range JEDEC type number Blank = 0 to +75 C (see Electrical Characteristics A = -55 to +100 C table) B = -55 to +150 C (required for JAN level) SYMBOLS & DEFINITIONS Symbol Definition I Maximum Zener Current: The maximum rated dc current for the specified power rating. ZM I , I , I Regulator Current: The dc regulator current (I ), at a specified test point (I ), near breakdown knee (I ). Z ZT ZK Z ZT ZK V Zener Voltage: The Zener voltage the device will exhibit at a specified current (I ) in its breakdown region. Z Z Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a Z or Z ZT ZK specified rms current modulation (typically 10% of I or I ) and superimposed on I or I respectively. ZT ZK ZT ZK T4-LDS-0155, Rev. 2 (121998) 2013 Microsemi Corporation Page 2 of 6