23A512-E/SN Microchip

23A512/23LC512 512Kbit SPI Serial SRAM with SDI and SQI Interface Device Selection Table Part Temp. Dual I/O Quad I/O Max. Clock VCC Range Packages Number Ranges (SDI) (SQI) Frequency (1) 23A512 1.7-2.2V I, E Yes Yes 20 MHz SN, ST, P (1) 23LC512 2.5-5.5V I, E Yes Yes 20 MHz SN, ST, P Note 1: 16 MHz for E-temp. Features: Description: SPI-Compatible Bus Interface: The Microchip Technology Inc. 23A512/23LC512 are 512Kbit Serial SRAM devices. The memory is - 20 MHz Clock rate accessed via a simple Serial Peripheral Interface (SPI) - SPI/SDI/SQI mode compatible serial bus. The bus signals required are a Low-Power CMOS Technology: clock input (SCK) plus separate data in (SI) and data - Read Current: 3 mA at 5.5V, 20 MHz out (SO) lines. Access to the device is controlled - Standby Current: 4 A at +85C through a Chip Select (CS) input. Additionally, SDI (Serial Dual Interface) and SQI (Serial Quad Interface) Unlimited Read and Write Cycles is supported if your application needs faster data rates. Zero Write Time This device also supports unlimited reads and writes to 64K x 8-bit Organization: the memory array. - 32-byte page The 23A512/23LC512 is available in standard Byte, Page and Sequential mode for Reads and packages including 8-lead SOIC, PDIP and advanced Writes 8-lead TSSOP. High Reliability Temperature Ranges Supported: Package Types (not to scale) - Industrial (I): -40Cto +85C - Automotive (E): -40C to +125C RoHS Compliant 8-Lead SOIC, TSSOP and PDIP Packages SOIC/TSSOP/PDIP CS 1 8 VCC Pin Function Table SO/SIO1 2 7 HOLD/SIO3 Name Function SIO2 3 6 SCK CS Chip Select Input VSS 4 5 SI/SIO0 SO/SIO1 Serial Output/SDI/SQI Pin SIO2 SQI Pin VSS Ground SI/SIO0 Serial Input/SDI/SQI Pin SCK Serial Clock HOLD/SIO3 Hold/SQI Pin VCC Power Supply 2012-2013 Microchip Technology Inc. DS20005155B-page 123A512/23LC512 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.3V to VCC +0.3V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature under bias.............................................................................................................-40C to +125C NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C DC CHARACTERISTICS Automotive (E): TA = -40C to +125C Param. Sym. Characteristic Min. Typ. Max. Units Test Conditions No. D001 VCC Supply voltage 1.7 2.2 V 23A512 2.5 5.5 23LC512 D002 VIH High-level input 0.7 VCC VCC + 0.3 V voltage D003 VIL Low-level input -0.3 0.2 VCC V 23A512 voltage 0.1 VCC 23LC512 D004 VOL Low-level output 0.2 VIOL = 1 mA voltage D005 VOH High-level output VCC - 0.5 V IOH = -400 A voltage D006 ILI Input leakage 1 ACS = VCC, VIN = VSS OR VCC current D007 ILO Output leakage 1 ACS = VCC, VOUT = VSS OR VCC current D008 ICC Read Operating current 1 10 mA FCLK = 20 MHz SO = O, 2.2V 3 10 mA FCLK = 20 MHz SO = O, 5.5V D009 ICCS Standby current 1 4 A CS = VCC = 2.2V, Inputs tied to VCC or VSS, I-Temp 12 A CS = VCC = 2.2V, Inputs tied to VCC or VSS, E-Temp 4 10 A CS = VCC = 5.5V, Inputs tied to VCC or VSS, I-Temp 20 A CS = VCC = 5.5V, Inputs tied to VCC or VSS, E-Temp D010 CINT Input capacitance 7 pF VCC = 5.0V, f = 1 MHz, TA = 25C (Note 1) D011 VDR RAM data retention 1.0 V (Note 2) voltage Note 1: This parameter is periodically sampled and not 100% tested. 2: This is the limit to which VCC can be lowered without losing RAM data. This parameter is periodically sampled and not 100% tested. 3: Typical measurements taken at room temperature. DS20005155B-page 2 2012-2013 Microchip Technology Inc.