23LCV512-I/SN Microchip

23LCV512 512-Kbit SPI Serial SRAM with Battery Backup and SDI Interface Device Selection Table Part Dual I/O Battery Max. Clock VCC Range Packages Number (SDI) Backup Frequency 23LCV512 2.5-5.5V Yes Yes 20 MHz SN, ST, P Features: Description: SPI-Compatible Bus Interface: The Microchip Technology Inc. 23LCV512 is a 512-Kbit Serial SRAM device. The memory is accessed via a - 20 MHz Clock rate simple Serial Peripheral Interface (SPI) compatible - SPI/SDI mode serial bus. The bus signals required are a clock input Low-Power CMOS Technology: (SCK) plus separate data in (SI) and data out (SO) - Read Current: 3 mA at 5.5V, 20 MHz lines. Access to the device is controlled through a Chip - Standby Current: 4 A at +85C Select (CS) input. Additionally, SDI (Serial Dual Inter- face) is supported if your application needs faster data Unlimited Read and Write Cycles rates. External Battery Backup support This device also supports unlimited reads and writes to Zero Write Time the memory array, and supports data backup via exter- 64K x 8-bit Organization: nal battery/coin cell connected to VBAT (pin 7). - 32-byte page The 23LCV512 is available in standard packages Byte, Page and Sequential mode for Reads and including 8-lead SOIC, PDIP and advanced 8-lead Writes TSSOP. High Reliability Temperature Range Supported: Package Types (not to scale) - Industrial (I): -40 Cto +85C Pb-Free and RoHS Compliant, Halogen Free. 8-Lead SOIC, TSSOP and PDIP Packages Pin Function Table SOIC/TSSOP/PDIP Name Function CS 1 8 Vcc CS Chip Select Input SO/SIO1 2 7 VBAT SO/SIO1 Serial Output/SDI pin NC 3 6 SCK Vss Ground Vss 4 5 SI/SIO0 SI/SIO0 Serial Input/SDI pin SCK Serial Clock VBAT External Backup Supply Input Vcc Power Supply 2012-2021 Microchip Technology Inc. DS20005157B-page 123LCV512 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V SS ......................................................................................................... -0.3V to VCC +0.3V All inputs and outputs w.r.t. V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature under bias...............................................................................................................-40C to +85C NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C DC CHARACTERISTICS Param. (1) Sym. Characteristic Min. Typ. Max. Units Test Conditions No. D001 VCC Supply voltage 2.5 5.5 V 23LCV512 D002 VIH High-level input 0.7 x VCC + 0.3 V voltage VCC D003 VIL Low-level input -0.3 0.10 x V 23LCV512 voltage VCC D004 VOL Low-level output 0.2 VIOL = 1 mA voltage D005 VOH High-level output VCC - 0.5 V IOH = -400 A voltage D006 ILI Input leakage 1 ACS = VCC, VIN = VSS OR VCC current D007 ILO Output leakage 1 ACS = VCC, VOUT = VSS OR VCC current D008 ICC Read Operating current 3 10 mA FCLK = 20 MHz SO = O, 5.5V D009 ICCS Standby current 4 10 ACS = VCC = 5.5V, Inputs tied to VCC or VSS D010 CINT Input capacitance 7 pF VCC = 0V, f = 1 MHz, Ta = 25C (Note 1) DR RAM data retention 1.0 V (Note 2) D011 V voltage D012 VTRIP VBAT Change Over 1.6 1.8 2.0 V Typical at Ta = 25C (Note 1) D013 VBAT VBAT Voltage Range 1.4 3.6 V (Note 1) D014 IBAT VBAT Current 1 A Typical at 2.5V, Ta = 25C (Note 1) Note 1: This parameter is periodically sampled and not 100% tested. Typical measurements taken at room temperature (25C). 2: This is the limit to which VDD can be lowered without losing RAM data. This parameter is periodically sampled and not 100% tested. DS20005157B-page 2 2012-2021 Microchip Technology Inc.