24C02C-I/P Microchip

24C02C 24C02C 24C02C 2 2K 5.0V I C Serial EEPROM Features Package Types Single supply with operation from 4.5 to 5.5V PDIP/SOIC Low-power CMOS technology - 1 mA active current typical A0 1 8 Vcc -10 A standby current typical at 5.5V A1 2 7 WP Organized as a single block of 256 bytes (256 x 8) Hardware write protection for upper half of array A2 3 6 SCL 2 2-wire serial interface bus, I C compatible Vss 4 5 SDA 100 kHz and 400 kHz compatibility Page write buffer for up to 16 bytes Self-timed write cycle (including auto-erase) TSSOP Fast 1 mS write cycle time for Byte or Page mode Address lines allow up to eight devices on bus 1 8 A0 VCC 1,000,000 erase/write cycles 2 7 A1 WP ESD protection > 4,000V 3 6 A2 SCL Data retention > 200 years 4 5 VSS SDA 8-pin PDIP, SOIC or TSSOP packages Available for extended temperature ranges - Commercial (C): 0C to +70C Block Diagram - Industrial (I): -40C to +85C - Automotive (E): -40C to +125C WP A0 A1 A2 HV Generator Description I/O Memory The Microchip Technology Inc. 24C02C is a 2K bit Control Control EEPROM Serial Electrically Erasable PROM with a voltage range Logic Logic XDEC Array of 4.5V to 5.5V. The device is organized as a single block of 256x8-bit memory with a 2-wire serial interface. Low current design permits operation with SDA SCL typical standby and active currents of only 10 A and 1 Write-Protect mA respectively. The device has a page write capability Circuitry Vcc YDEC for up to 16 bytes of data and has fast write cycle times Vss of only 1 mS for both byte and page writes. Functional Sense Amp. address lines allow the connection of up to eight R/W Control 24C02C devices on the same bus for up to 16K bits of contiguous EEPROM memory. The device is available in the standard 8-pin PDIP, 8-pin SOIC (150 mil) and TSSOP packages. 2 I C is a trademark of Philips Corporation. 2003 Microchip Technology Inc. DS21202D-page 124C02C 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied................................................................................................-65C to +125C ESD protection on all pins...................................................................................................................................... 4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS All parameters apply across the CC = +4.5V to +5.5V V specified operating ranges unless Commercial (C): TA = 0C to +70C otherwise noted. Industrial (I): TA = -40C to +85C Automotive (E): TA = -40C to +125C Parameter Symbol Min. Max. Units Conditions SCL and SDA pins: High-level input voltage VIH 0.7 VCC V Low-level input voltage VIL 0.3 VCC V Hysteresis of Schmitt Trigger inputs VHYS 0.05 VCC V (Note) Low-level output voltage VOL 0.40 V IOL = 3.0 mA, Vcc = 4.5V Input leakage current ILI 1 AVIN = 0.1V to 5.5V, WP = Vss Output leakage current ILO 1 AVOUT = 0.1V to 5.5V Pin capacitance (all inputs/outputs) CIN, COUT 10 pFVCC = 5.0V (Note) TA = 25C, f = 1 MHz Operating current ICC Read 1 mA VCC = 5.5V, SCL = 400 kHz ICC Write 3 mA VCC = 5.5V Standby current ICCS 50 AVCC = 5.5V, SDA = SCL = VCC WP = VSS Note: This parameter is periodically sampled and not 100% tested. DS21202D-page 2 2003 Microchip Technology Inc.