X-On Electronics has gained recognition as a prominent supplier of 24LC1026T-I/SM EEPROM across the USA, India, Europe, Australia, and various other global locations. 24LC1026T-I/SM EEPROM are a product manufactured by Microchip. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

24LC1026T-I/SM Microchip

24LC1026T-I/SM electronic component of Microchip
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Part No.24LC1026T-I/SM
Manufacturer: Microchip
Category: EEPROM
Description: EEPROM 1024K 128K X 8 2.5V SER EE 128 BYTE PAGE
Datasheet: 24LC1026T-I/SM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 2100
Multiples : 2100
2100 : USD 4.7069
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We are delighted to provide the 24LC1026T-I/SM from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 24LC1026T-I/SM and other electronic components in the EEPROM category and beyond.

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24AA1026/24LC1026/24FC1026 2 1024K I C CMOS Serial EEPROM This device is capable of both random and sequential Device Selection Table: reads. Reads may be sequential within address Part VCC Max. Clock Temp. boundaries 0000h to FFFFh and 10000h to 1FFFFh. Number Range Frequency Ranges Functional address lines allow up to four devices on the same data bus. This allows for up to 4 Mbits total 24AA1026 1.7-5.5V 400 kHz I system EEPROM memory. This device is available in 24LC1026 2.5-5.5V 400 kHz* I, E the standard 8-pin PDIP, SOIC and SOIJ packages. 24FC1026 1.8-5.5V 1 MHz I 100 kHz for VCC < 2.5V Package Type *100 kHz for VCC <4.5V, E-temp 400 kHz for VCC < 2.5V PDIP NC 1 8 VCC Features: A1 2 7 WP A2 3 6 SCL Low-Power CMOS Technology: - Read current 450 A, maximum VSS 4 5 SDA - Standby current 5 A, maximum 2 2-Wire Serial Interface, I C Compatible SOIJ/SOIC Cascadable up to Four Devices 1 8 NC VCC Schmitt Trigger Inputs for Noise Suppression 2 7 A1 WP Output Slope Control to Eliminate Ground Bounce 3 6 100 kHz and 400 kHz Clock Compatibility A2 SCL 1 MHz Clock for FC Versions 4 5 VSS SDA Page Write Time 3 ms, typical Self-Timed Erase/Write Cycle 128-Byte Page Write Buffer Block Diagram Hardware Write-Protect ESD Protection >400V A1 A2 WP HV Generator More than 1 Million Erase/Write Cycles Data Retention >200 Years I/O Memory Factory Programming Available EEPROM Control Control XDEC Array Packages include 8-lead PDIP, SOIJ and SOIC Logic Logic Page Latches Pb-Free and RoHS Compliant Temperature Ranges: I/O - Industrial (I): -40 C to +85C SCL YDEC - Automotive (E): -40C to +125 C SDA Description: VCC Sense AMP VSS The Microchip Technology Inc. 24AA1026/24LC1026/ R/W Control 24FC1026 (24XX1026*) is a 128K x 8 (1024K bit) Serial Electrically Erasable PROM, capable of operation across a broad voltage range (1.7V to 5.5V). *24XX1026 is used in this document as a generic part number It has been developed for advanced, low-power for the 24AA1026/24LC1026/24FC1026 devices. applications such as personal communications or data acquisition. This device has both byte write and page write capability of up to 128 bytes of data. 2011 Microchip Technology Inc. DS22270B-page 124AA1026/24LC1026/24FC1026 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS .......................................................................................................... -0.6V to VCC+1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied................................................................................................-40C to +125C ESD protection on all pins 4kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): VCC = +1.7V to 5.5V TA = -40C to +85C DC CHARACTERISTICS Automotive (E): Vcc = +2.5V to 5.5V TA = -40C to +125C Param. Sym. Characteristic Min. Max. Units Conditions No. A1, A2, SCL, SDA and WP pins: IH High-level input voltage 0.7 VCC V D1 V D2 VIL Low-level input voltage 0.3 VCC V VCC 2.5V 0.2 VCC V VCC < 2.5V D3 VHYS Hysteresis of Schmitt CC VVCC 2.5V (Note) 0.05 V Trigger inputs (SDA, SCL pins) D4 VOL Low-level output voltage 0.40 V IOL = 3.0 mA VCC = 4.5V IOL = 2.1 mA VCC = 2.5V D5 ILI Input leakage current 1 AVIN = VSS or VCC VIN = VSS or VCC D6 ILO Output leakage current 1 AVOUT = VSS or VCC D7 CIN, Pin capacitance 10 pFVCC = 5.0V (Note) COUT (all inputs/outputs) TA = 25C, FCLK = 1 MHz D8 ICC Read Operating current 450 AVCC = 5.5V, SCL = 400 kHz ICC Write 5 mA VCC = 5.5V D9 ICCS Standby current 5 A SCL, SDA, VCC = 5.5V A1, A2, WP = VSS TA = -40C to +85C Note: This parameter is periodically sampled and not 100% tested. DS22270B-page 2 2011 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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