X-On Electronics has gained recognition as a prominent supplier of 25AA640AT-IST EEPROM across the USA, India, Europe, Australia, and various other global locations. 25AA640AT-IST EEPROM are a product manufactured by Microchip. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

25AA640AT-IST Microchip

25AA640AT-IST electronic component of Microchip
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Part No.25AA640AT-IST
Manufacturer: Microchip
Category: EEPROM
Description: Microchip Technology EEPROM 64K 8K X 8 18V SER EE IND
Datasheet: 25AA640AT-IST Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8184 ea
Line Total: USD 0.82 
Availability - 3741
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3741
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8184
25 : USD 0.8008
100 : USD 0.8008

   
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We are delighted to provide the 25AA640AT-IST from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 25AA640AT-IST and other electronic components in the EEPROM category and beyond.

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25AA640A/25LC640A 64K SPI Bus Serial EEPROM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 25AA640A 1.8V-5.5V 32 Bytes I, E MF, MS, P, SN, MNY, ST 25LC640A 2.5V-5.5V 32 Bytes I, E MF, MS, P, SN, MNY, ST Communication to the device can be paused via the Features hold pin (HOLD). While the device is paused, transi- Maximum Clock 10 MHz tions on its inputs will be ignored, with the exception of Low-Power CMOS Technology: Chip Select, allowing the host to service higher priority interrupts. - Maximum Write current: 5 mA at 5.5V, 10 MHz Note 1: 25XX640A is used in this document as a - Read current: 5 mA at 5.5V, 10 MHz generic part number for the 25AA640A - Standby current: 1 A at 5.5V and 25LC640A devices. 8192 x 8-Bit Organization 32-Byte Page Packages Self-Timed Erase and Write Cycles 8-Lead DFN (5 ms maximum) 8-Lead MSOP Block Write Protection: 8-Lead PDIP - Protect none, 1/4, 1/2 or all of array 8-Lead SOIC Built-In Write Protection: 8-Lead TDFN - Power-on/off data protection circuitry 8-Lead TSSOP - Write enable latch - Write-protect pin Package Types (not to scale) Sequential Read High Reliability: 8-Lead PDIP/SOIC - Endurance: 1,000,000 erase/write cycles 8-Lead DFN/TDFN - Data retention: > 200 years CS 1 8 VCC 1 CS 8 VCC SO 2 7 HOLD - ESD protection: > 4000V 2 7 SO HOLD WP 3 6 SCK 3 6 SCK RoHS Compliant WP VSS 4 5 SI VSS 4 5 SI Temperature Ranges Supported: - Industrial (I): -40Cto +85C - Extended (E): -40C to +125C Automotive AEC-Q100 Qualified 8-Lead MSOP/TSSOP X-Rotated TSSOP CS 1 8 VCC 1 8 SCK HOLD SO 2 7 VCC 2 7 SI Description HOLD 6 6 3 3 VSS WP SCK CS 4 5 4 5 VSS SO SI WP The Microchip Technology Inc. 25AA640A/25LC640A (1) (25XX640A ) are 64-Kbit Serial Electrically Erasable PROMs. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. 2003-2021 Microchip Technology Inc. DS20001830G-page 125AA640A/25LC640A 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V SS ......................................................................................................... -0.6V to VCC +1.0V All inputs and outputs w.r.t. V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature under bias.............................................................................................................-40C to +125C ESD protection on all pins..........................................................................................................................................4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS A = -40C to +85C VCC = 1.8V to 5.5V Industrial (I): T DC CHARACTERISTICS Extended (E):TA = -40C to +125C VCC = 1.8V to 5.5V Param. Symbol Characteristic Min. Max. Units Test Conditions No. High-Level D001 VIH1 0.7 VCC VCC +1 V Input Voltage IL1 -0.3 0.3 VCC VVCC2.7V D002 V Low-Level Input Voltage D003 VIL2 -0.3 0.2 VCC VVCC < 2.7V D004 VOL 0.4 VIOL = 2.1 mA Low-Level OutputVoltage D005 VOL 0.2 VIOL = 1.0 mA, VCC < 2.5V High-Level D006 VOH VCC -0.5 V IOH = -400 A Output Voltage LI Input Leakage Current 1 A CS = VCC, VIN = VSS or VCC D007 I D008 ILO Output Leakage Current 1 A CS = VCC, VOUT = VSS or VCC Internal Capacitance TA = +25C, CLK = 1.0 MHz, D009 CINT 7 pF (all inputs and outputs) VCC = 5.0V (Note 1) VCC = 5.5V FCLK = 10.0 MHz 5 mA SO = Open D010 ICC Read CC = 2.5V FCLK = 5.0 MHz V 2.5 mA Operating Current SO = Open 5 mAVCC = 5.5V D011 ICC Write 3 mAVCC = 2.5V CS = VCC = 5.5V, 5 A Inputs tied to VCC or VSS, +125C D012 ICCS Standby Current = VCC = 5.5V, CS 1 A Inputs tied to VCC or VSS, +85C Note 1: This parameter is periodically sampled and not 100% tested. DS20001830G-page 2 2003-2021 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
ATM
Atmel
Atmel Wireless (VA)
M4S
M6S
M8S
M9S
MCP
Micrel
Micrel Inc
MICREL SEMICONDUCTOR
MICREL SYNERGY SEMI
MICROCHIP (ATMEL)
MICROCHIP (MICREL)
MICROCHIP (MICROSEMI)
MICROCHIP (SUPERTEX)
Microchip / Microsemi
Microchip / Vectron
Microchip Tech
MICROCHIP TECH.
Microchip Technology
Microchip Technology Micrel
Microchip Technology / Atmel
Microchip Technology / Micrel
MICROCHIPDIRECT
MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
Microsemi Commercial Components Group
MICROSEMI COMMUNICATIONS INC.
Microsemi Consumer Medical Product Group
Microsemi Corporation
Microsemi FTD
Microsemi Power Management Group
Microsemi Power Products Group
Microsemi SoC
MICROSEMI/LAWRENCE
MICROSEMI/LINFINITY
MSC
Roving Networks
ROVING NETWORKS INC
ROVING NETWORKS INC.
ROVING NETWORKS, INC.
Silicon Storage
SILICON STORAGE TECH
SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi
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