X-On Electronics has gained recognition as a prominent supplier of 25LC1024-I/SM EEPROM across the USA, India, Europe, Australia, and various other global locations. 25LC1024-I/SM EEPROM are a product manufactured by Microchip. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

25LC1024-I/SM Microchip

25LC1024-I/SM electronic component of Microchip
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Part No.25LC1024-I/SM
Manufacturer: Microchip
Category: EEPROM
Description: Memory; EEPROM; SPI; 128kx8bit; 2.5÷5.5V; 20MHz; SO8
Datasheet: 25LC1024-I/SM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
17: USD 1.963 ea
Line Total: USD 33.37 
Availability - 736
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 17  Multiples: 1
Pack Size: 1
Availability Price Quantity
3477
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 5
Multiples : 5
5 : USD 5.3625
90 : USD 4.5
180 : USD 4.425
270 : USD 4.3625
540 : USD 4.3
1080 : USD 4.2375
2520 : USD 4.175
5040 : USD 4.1125

35
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 90
Multiples : 90
90 : USD 4.7736
540 : USD 4.7385

736
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 17
Multiples : 1
17 : USD 1.963
25 : USD 1.963
75 : USD 1.963
150 : USD 1.963
400 : USD 1.963

88
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 3.7751
10 : USD 3.2644
30 : USD 2.9609
100 : USD 2.6537
500 : USD 2.5105
1000 : USD 2.4465

375
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 5.74
10 : USD 5.614
25 : USD 5.572

375
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 13
Multiples : 1
13 : USD 8.0217

35
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 37
Multiples : 37
37 : USD 4.7736
540 : USD 4.7385

512
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 8
Multiples : 1
8 : USD 5.0862
10 : USD 5.07
50 : USD 5.0375
180 : USD 5.0212

2631
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 13
Multiples : 1
13 : USD 8.0048
25 : USD 7.6608
50 : USD 7.3689
100 : USD 7.1189
250 : USD 6.903
500 : USD 6.7152
1000 : USD 6.5509
2500 : USD 6.4064

   
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We are delighted to provide the 25LC1024-I/SM from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 25LC1024-I/SM and other electronic components in the EEPROM category and beyond.

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25LC1024 1-Mbit SPI Bus Serial EEPROM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 25LC1024 2.5V-5.5V 256 Bytes I, E MF, P, SM Features Pin Function Table 20 MHz Maximum Clock Speed Name Function Byte and Page-Level Write Operations: Chip Select Input CS - 256-byte page - 6 ms maximum write cycle time SO Serial Data Output - No page or sector erase required WP Write-Protect Low-Power CMOS Technology: VSS Ground - Maximum Write current: 5 mA at 5.5V, SI Serial Data Input 20 MHz - Read current: 7 mA at 5.5V, 20 MHz SCK Serial Clock Input - Standby current: 1 A at 2.5V HOLD Hold Input (Deep power-down) VCC Supply Voltage Electronic Signature for Device ID Self-Timed Erase and Write Cycles: Description - Page Erase (6 ms maximum) - Sector Erase (10 ms maximum) The Microchip Technology Inc. 25LC1024 is a - Chip Erase (10 ms maximum) 1024-Kbit serial EEPROM memory with byte-level and Sector Write Protection (32K byte/sector): page-level serial EEPROM functions. It also features - Protect none, 1/4, 1/2 or all of array Page, Sector and Chip erase instructions typically associated with Flash-based products. These instruc- Built-In Write Protection: tions are not required for byte or page write operations. - Power-on/off data protection circuitry The memory is accessed via a simple Serial Peripheral - Write enable latch Interface (SPI) compatible serial bus. The bus signals - Write-protect pin required are a clock input (SCK) plus separate data in High Reliability: (SI) and data out (SO) lines. Access to the device is - Endurance: 1M erase/write cycles controlled by a Chip Select (CS) input. - Data Retention: >200 years Communication to the device can be paused via the - ESD Protection: >4000V hold pin (HOLD). While the device is paused, transi- Temperature Ranges Supported: tions on its inputs will be ignored, with the exception of - Industrial (I): -40 Cto +85C Chip Select, allowing the host to service higher priority - Extended (E): -40C to +125C interrupts. RoHS Compliant Automotive AEC-Q100 Qualified Packages 8-Lead DFN-S, 8-Lead PDIP and 8-Lead SOIJ Package Types (not to scale) 8-Lead DFN-S PDIP/SOIJ (Top View) (Top View) 1 CS 8 VCC CS 1 8 VCC 2 SO 7 HOLD SO 2 7 HOLD 3 WP 6 SCK 3 6 WP SCK VSS 4 4 5 SI VSS 5 SI 2007-2021 Microchip Technology Inc. DS20002064E-page 125LC1024 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V SS ......................................................................................................... -0.6V to VCC +1.0V All inputs and outputs w.r.t. V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature under bias.............................................................................................................-40C to +125C ESD protection on all pins..........................................................................................................................................4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C VCC = 2.5V to 5.5V DC CHARACTERISTICS Extended (E): TA = -40C to +125C VCC = 2.5V to 5.5V Param. Symbol Characteristic Min. Max. Units Test Conditions No. D001 VIH1 High-Level Input Voltage 0.7 VCC VCC +1 V D002 VIL1 -0.3 0.3 VCC VVCC2.7V Low-Level Input Voltage D003 VIL2 -0.3 0.2 VCC VVCC < 2.7V D004 VOL Low-level Output Voltage 0.4 V IOL = 2.1 mA D005 VOH High-Level Output Voltage VCC -0.2 V IOH = -400 A LI Input Leakage Current 1 A CS = VCC, VIN = VSS or VCC D006 I D007 ILO Output Leakage Current 1 A CS = VCC, VOUT = VSS or VCC Internal Capacitance TA = +25C, CLK = 1.0 MHz, D008 CINT 7 pF (all inputs and outputs) VCC = 5.0V (Note 1) VCC = 5.5V FCLK = 20.0 MHz 10 mA SO = Open D009 ICC Read VCC = 2.5V FCLK = 10.0 MHz 5 mA Operating Current SO = Open 7 mAVCC = 5.5V D010 ICC Write 5 mAVCC = 2.5V CS = VCC = 5.5V, Inputs tied to 20 A VCC or VSS, +125C D011 ICCS Standby Current = VCC = 5.5V, Inputs tied to CS 12 A VCC or VSS, +85C CS = VCC = 2.5V, Inputs tied to 1 A VCC or VSS, +85C D012 ICCSPD Deep Power-Down Current CS = VCC = 2.5V, Inputs tied to 2 A VCC or VSS, +125C Note 1: This parameter is periodically sampled and not 100% tested. DS20002064E-page 2 2007-2021 Microchip Technology Inc.

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8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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