TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 Devices Qualified Level 2N2221A 2N2222A JAN 2N2221AL 2N2222AL JANTX 2N2221AUA 2N2222AUA JANTXV 2N2221AUB 2N2222AUB JANS JANHC MAXIMUM RATINGS Ratings Symbol All Types Unit - Emitter Voltage 50 V CEO - 75 V Emitter - 6.0 V EBO TO-18* (TO-206AA) 800 I C 0 Total Power Dissipation T = +25 A 0.5 W P T 0.65 0.50 0 - 65 to +200 C T , T op 4 PIN* THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance, Junction - - 325 0 R 210 325 3 PIN* 0 0 1) Derate linearly 3.08 mW/ > +37.5 C A 0 0 2) Derate linearly 4.76 mW/ > +63.5 A 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - V 50 CEO I C - ent I 10 V 10 V Emitter - 10 V = 6.0 Vdc I EB EBO 10 V = 4.0 Vdc EB - I 50 CES V CE 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 11 58 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page = 50 Vdc Adc Base Cutoff Current Collector Adc Adc Base Cutoff Current CB = 60 Vdc Adc CB = 75 Vdc CBO Adc Base Cutoff Curr Collector = 10 mAdc (BR) Vdc Emitter Breakdown Voltage Collector outline *See appendix A for package C C above T 2N2221AUB, 2N2222AUB C above T 2N2221AUB 2N2222AUB 222AUA 2N2221AUA 2N2 JA C/W 2N2221A, L 2N2222A, L Ambient to 2N2222AUA 2N2221AUA, stg Operating & Storage Junction Temperature Range 1AUB 2N2222AUB 2N222 (1) 2N2221AUA 2N2222AUA (2) 2N2221A, L 2N2222A, L (1) C 2N2221A, 2N2222A mAdc Collector Current Vdc Base Voltage CBO Vdc Base Voltage Collector Vdc Collector 2N2221A, 2N2221AUA, 2N2221AUB, 2N2222A, 2N2222AUA, 2N2222AUB JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (3) ON CHARACTERISTICS - Current Transfer Ratio 30 I = 10 Vdc C CE 50 35 150 I = 10 Vdc C CE 75 325 40 I = 10 Vdc h C CE FE 100 40 120 I = 10 Vdc C CE 100 300 20 I = 10 Vdc C CE 30 - Emitter Saturation Voltage 0.3 I = 1 V C B CE(sat) 1.0 I B Base - Emitter Voltage 0.6 1.2 I V C B BE(sat) 2.0 I B DYNAMIC CHARACTERISTICS Small - Signal Short - Circuit Forward Curr ent Transfer Ratio h I = 10 Vdc, f = 1.0 kHz 30 C CE 50 Magnitude of Small - Signal Short - Circuit Forward Current Transfer Ratio 2.5 h I = 20 Vdc, f = 100 MHz C CE Output Capaci C 8.0 obo V = 0, 100 kHz 1.0 MHz E 25 C ibo V = 0, 100 kHz 1.0 MHz EB C SWITCHING CHARACTERISTICS Turn - t 35 s - - 19500/255 Turn - t 300 s See F - - 19500/255 (3) Pulse Test: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle PRF igure 9 of MIL off Off Time PRF See Figure 8 of MIL on On Time f = 0.5 Vdc, I pF Input Capacitance CB f = 10 Vdc, I pF tance = 20 mAdc, V fe 2N2222A, L, UA, UB fe 2N2221A, L, UA, UB = 1.0 mAdc, V C = 50 mAdc = 500 mAdc, I Vdc = 15 mAdc = 150 mAdc, I C = 50 mAdc = 500 mAdc, I Vdc = 15 mAdc 50 mAdc, I Collector 2N2222A, L, UA, UB 2N2221A, L, UA, UB = 500 mAdc, V 2N2222A, L, UA, UB 2N2221A, L, UA, UB = 150 mAdc, V , UA, UB 2N2222A, L 2N2221A, L, UA, UB = 10 mAdc, V 2N2222A, L, UA, UB 2N2221A, L, UA, UB = 1.0 mAdc, V 2N2222A, L, UA, UB 2N2221A, L, UA, UB = 0.1 mAdc, V Forward