93LC46T-ISN Microchip

93LC46 93LC46X 93LC56 93LC56X 93LC66 93LC66X Not recommended for new designs Please use 93LC46C, 93LC56C or 93LC66C. 93LC46/56/66 1K/2K/4K 2.5V Microwire Serial EEPROM Features: Package Types Single supply with programming operation down PDIP/SOIC to 2.5V Low-power CMOS technology CS 1 8 VCC 100 A typical active read current at 2.5V CLK 2 7 NU 3 A typical standby current at 2.5V DI 3 6 ORG ORG pin selectable memory configuration DO 4 5 VSS 128 x 8- or 64 x 16-bit organization (93LC46) 256 x 8- or 128 x 16-bit organization (93LC56) ROTATED SOIC 512 x 8 or 256 x 16 bit organization (93LC66) NU 1 8 ORG Self-timed erase and write cycles VCC 2 7 VSS (including auto-erase) CS 3 6 Automatic ERAL before WRAL DO Power on/off data protection circuitry CLK 4 5 DI Industry standard 3-wire serial I/O Device status signal during erase/write cycles Sequential read function Block Diagram 1,000,000 E/W cycles ensured VCC VSS Data retention > 200 years 8-pin PDIP/SOIC Address (SOIC in JEDEC standards) Memory Decoder Array Temperature ranges supported: - Industrial (I): -40C to +85C Address Counter Description: DO Output Data Register The Microchip Technology Inc. 93LC46/56/66 are 1K, Buffer DI 2K and 4K low voltage serial Electrically Erasable PROMs (EEPROM). The device memory is configured Mode ORG as x8 or x16 bits depending on the external logic of Decode CS Logic levels of the ORG pin. Advanced CMOS technology makes these devices ideal for low power nonvolatile memory applications. The 93LC Series is available in Clock CLK Register standard 8-pin PDIP and surface mount SOIC packages. The rotated pin-out 93LC46X/56X/66X are offered in the SN package only. 2004 Microchip Technology Inc. DS21712B-page 193LC46/56/66 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS ........................................................................................................ -0.6V to VCC + 1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied................................................................................................-40C to +125C ESD protection on all pins ...................................................................................................................................................... 4kV NOTICE: Stresses above those listed under Maximum ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS VCC = +2.5V to +5.5V DC CHARACTERISTICS Industrial (I): TA = -40C to +85C Param. Sym Characteristic Min Typ Max Units Conditions No. D1 VIH1 High-level input voltage 2.0 VCC +1 V VCC 2.7V VIH2 0.7 VCC VCC +1 V VCC 2.7V D2 VIL1 Low-level input voltage -0.3 0.8 V VCC 2.7V VIL2 -0.3 0.2 VCC VVCC 2.7V D3 VOL1 Low-level output voltage 0.4 V IOL = 2.1 mA, VCC = 4.5V VOL20.3VIOL = 100 A, VCC = 2.5V D4 VOH1 High-level output voltage 2.4 V IOL = 400 A, VCC = 4.5V VOH2VCC -0.2 V IOL = 100 A, VCC = 2.5V D5 ILI Input leakage current 10 AVIN = 0.1V to VCC D6 ILO Output leakage current 10 AVOUT = 0.1V to VCC D7 CIN, Pin capacitance 7 pFVIN/VOUT = 0V (Note 1 & 2) COUT (all inputs/outputs) TA = 25C, FCLK = 1 MHz D8 ICC write Operating current 3 mA FCLK = 2 MHz, VCC = 5.5V (Note 2) CC read CLK = 2 MHz, VCC = 5.5V D9 I 1 mA F 500 A FCLK = 1 MHz, VCC = 3.0V 100 A FCLK = 1 MHz, VCC = 2.5V D10 ICCS Standby current A CC = 5.5V 100 CLK = CS = 0V V 30 A CLK = CS = 0V VCC = 3.0V 3 A CLK = CS = 0V VCC = 2.5V ORG, DI = VSS or VCC Note 1: This parameter is tested at TA = 25C and FCLK = 1 MHz. 2: This parameter is periodically sampled and not 100% tested. DS21712B-page 2 2004 Microchip Technology Inc.