93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 8K Microwire Compatible Serial EEPROM Device Selection Table Part Number VCC Range ORG Pin PE Pin Word Size Temp Ranges Packages 93AA76A 1.8-5.5 No No 8-bit I P, SN, ST, MS, OT 93AA76B 1.8-5-5 No No 16-bit I P, SN, ST, MS, OT 93LC76A 2.5-5.5 No No 8-bit I, E P, SN, ST, MS, OT 93LC76B 2.5-5.5 No No 16-bit I, E P, SN, ST, MS, OT 93C76A 4.5-5.5 No No 8-bit I, E P, SN, ST, MS, OT 93C76B 4.5-5.5 No No 16-bit I, E P, SN, ST, MS, OT 93AA76C 1.8-5.5 Yes Yes 8- or 16-bit I P, SN, ST, MS, MC, MN 93LC76C 2.5-5.5 Yes Yes 8- or 16-bit I, E P, SN, ST, MS, MC, MN 93C76C 4.5-5.5 Yes Yes 8- or 16-bit I, E P, SN, ST, MS, MC, MN Features: Description: Low-Power CMOS Technology The Microchip Technology Inc. 93XX76A/B/C devices are 8Kbit, low-voltage, serial Electrically Erasable ORG Pin to Select Word Size for 76C Version PROMs (EEPROM). Word-selectable devices such as 1024 x 8-bit Organization A Devices (no ORG) the 93XX76C are dependent upon external logic levels 512 x 16-bit Organization B Devices (no ORG) driving the ORG pin to set word size. The 93XX76A Program Enable Pin to Write-Protect the Entire devices provide dedicated 8-bit memory organization, Array (76C version only) while the 93XX76B devices provide dedicated 16-bit Self-Timed Erase/Write Cycles (including memory organization. A Program Enable (PE) pin allows Auto-Erase) the user to write-protect the entire memory array. Automatic ERAL Before WRAL Advanced CMOS technology makes these devices ideal for low-power, nonvolatile memory applications. The Power-On/Off Data Protection Circuitry 93XX Series is available in standard packages including Industry Standard 3-Wire Serial I/O 8-lead PDIP and SOIC, and advanced packaging includ- Device Status Signal (Ready/Busy) ing 8-lead MSOP, 6-lead SOT-23, 8-lead 2x3 DFN/ Sequential Read Function TDFN and 8-lead TSSOP. All packages are Pb-free 1,000,000 Erase/Write Cycles (Matte Tin) finish. Data Retention > 200 Years Package Types (not to scale) Pb-free and RoHS Compliant Temperature Ranges Supported: SOT-23 PDIP/SOIC (OT) (P, SN) - Industrial (I) -40C to +85C CS 1 8 VCC 1 6 - Automotive (E) -40C to +125C DO VCC (1) CLK 2 7 PE 2 5 VSS CS (1) Pin Function Table DI 3 6 ORG 3 4 DI CLK DO 4 5 VSS Name Function CS Chip Select DFN/TDFN TSSOP/MSOP (MC, MN) CLK Serial Data Clock (ST, MS) DI Serial Data Input CS 1 8 VCC 1 8 CS VCC 7 PE (1) CLK 2 7 DO Serial Data Output CLK 2 PE (1) ORG 3 6 6 DI ORG DI 3 SS Ground V 4 5 DO VSS DO 5 4 VSS PE Program Enable 93XX76C only ORG Memory Configuration 93XX76C only Note 1: 93XX76C only. CC Power Supply V 2003-2012 Microchip Technology Inc. DS21796M-page 193AA76A/B/C, 93LC76A/B/C, 93C76A/B/C 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied................................................................................................-40C to +125C ESD protection on all pins 4kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS All parameters apply over the specified Industrial (I): TA = -40C to +85C, VCC = +1.8V to 5.5V ranges unless otherwise noted. Automotive (E): TA = -40C to +125C, VCC = +2.5V to 5.5V Param. Symbol Parameter Min Typ Max Units Conditions No. D1 VIH1 High-level input voltage 2.0 VCC +1 V VCC 2.7V VIH2 0.7 VCC VCC +1 V VCC < 2.7V D2 VIL1 Low-level input voltage -0.3 0.8 V VCC 2.7V VIL2 -0.3 0.2 VCC V VCC < 2.7V D3 VOL1 Low-level output voltage 0.4 V IOL = 2.1 mA, VCC = 4.5V VOL2 0.2 V IOL = 100 A, VCC = 2.5V D4 VOH1 High-level output voltage 2.4 V IOH = -400 A, VCC = 4.5V VOH2 VCC - 0.2 V IOH = -100 A, VCC = 2.5V D5 ILI Input leakage current 1 AVIN = VSS or VCC D6 ILO Output leakage current 1 AVOUT = VSS or VCC D7 CIN, Pin capacitance (all inputs/ 7 pFVIN/VOUT = 0V (Note 1) COUT outputs) TA = 25C, FCLK = 1 MHz D8 ICC write Write current 3 mA FCLK = 3 MHz, VCC = 5.5V 500 A FCLK = 2 MHz, VCC = 2.5V D9 ICC read Read current CLK = 3 MHz, VCC = 5.5V 1 mA F 500 A FCLK = 2 MHz, VCC = 3.0V 100 A FCLK = 2 MHz, VCC = 2.5V D10 ICCS Standby current 1 A I Temp 5 A E Temp CLK = CS = 0V ORG = DI = PE = VSS or VCC (Note 2) (Note 3) D11 VPOR VCC voltage detect (Note 1) 1.5 V 93AA76A/B/C, 93LC76A/B/C 3.8 V 93C76A/B/C Note 1: This parameter is periodically sampled and not 100% tested. 2: ORG and PE pins not available on A or B versions. 3: Ready/Busy status must be cleared from DO see Section 3.4 Data Out (DO). DS21796M-page 2 2003-2012 Microchip Technology Inc.