APT10025JVR 1000V 34A 0.250 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.UL Recognize ISOTOP D Faster Switching 100% Avalanche Tested Lower Leakage Popular SOT-227 Package G S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT10025JVR UNIT V Drain-Source Voltage 1000 Volts DSS I Continuous Drain Current T = 25C 34 D C Amps 1 I Pulsed Drain Current 136 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C 700 Watts C P D Linear Derating Factor 5.6 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 34 Amps AR 1 E 50 Repetitive Avalanche Energy AR mJ 4 E Single Pulse Avalanche Energy 3600 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 1000 Volts DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 34 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, 0.5 I ) Ohms 0.250 DS(on) GS D Cont. Zero Gate Voltage Drain Current (V = V , V = 0V) 100 DS DSS GS I A DSS Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125C) 500 DS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 5mA) Volts 24 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT10025JVR Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance V = 0V 15000 18000 iss GS C Output Capacitance V = 25V oss 1360 1900 pF DS C f = 1 MHz Reverse Transfer Capacitance rss 710 1065 Q 3 Total Gate Charge V = 10V g 660 990 GS Q V = 0.5 V Gate-Source Charge 51 75 nC gs DD DSS I = I 25C Q D D Cont. Gate-Drain Mille) Charge gd 250 375 t Turn-on Delay Time V = 15V 22 44 d(on) GS t V = 0.5 V Rise Time 20 40 r DD DSS ns I = I 25C t Turn-off Delay Time D D Cont. 97 145 d(off) R = 0.6 t G Fall Time 16 32 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 34 S Amps 1 I Pulsed Source Current (Body Diode) 136 SM 2 V Diode Forward Voltage (V = 0V, I = -I ) 1.3 Volts SD GS S D Cont. t Reverse Recovery Time (I = -I , dl /dt = 100A/s) 1300 ns rr S D Cont. S Q Reverse Recovery Charge (I = -I , dl /dt = 100A/s) 38 C rr S D Cont. S THERMAL/PACKAGE CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.18 JC C/W R Junction to Ambient 40 JA V RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) 2500 Volts Isolation Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 13 lbin 1 3 Repetitive Rating: Pulse width limited by maximum junction See MIL-STD-750 Method 3471 4 temperature. Starting T = +25C, L = 6.23mH, R = 25, Peak I = 34A j G L 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 0.2 D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 Note: 0.02 0.005 t 1 0.01 t SINGLE PULSE 2 t 1 Duty Factor D = / t 2 0.001 Peak T = P x Z + T J DM JC C 0.0005 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5580 Rev A Z , THERMAL IMPEDANCE (C/W) JC P DM