APT10035JLL 1000V 25A 0.350 R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses gUL Recognize along with exceptionally fast switching speeds inherent with APT s ISOTOP patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular SOT-227 Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C APT10035JLL Symbol Parameter UNIT V Drain-Source Voltage 1000 Volts DSS I Continuous Drain Current T = 25C 25 D C Amps 1 I Pulsed Drain Current 100 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C 520 Watts C P D Linear Derating Factor 4.16 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 25 Amps AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E 3000 Single Pulse Avalanche Energy AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 1000 Volts DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 25 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, 14A) Ohms 0.350 DS(on) GS Zero Gate Voltage Drain Current (V = 1000V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 800V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) 100 nA GSS GS DS V Gate Threshold Voltage (V = V , I = 2.5mA) Volts 35 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT10035JLL Test Conditions Symbol Characteristic MIN TYP MAX UNIT C Input Capacitance 5185 iss V = 0V GS C Output Capacitance V = 25V 881 oss DS pF f = 1 MHz C Reverse Transfer Capacitance 160 rss Q 3 Total Gate Charge V = 10V 186 g GS V = 500V Q DD Gate-Source Charge 24 gs nC I = 28A 25C D Q Gate-Drain Mille) Charge 122 gd RESISTIVE SWITCHING t Turn-on Delay Time 12 d(on) V = 15V GS t Rise Time 10 r = 500V V DD ns = 28A 25C t I 36 Turn-off Delay Time D d(off) = 1.6 R G t Fall Time 9 f INDUCTIVE SWITCHING 25C E 6 900 Turn-on Switching Energy on V = 670V, V = 15V DD GS E I = 28A, R = 5 Turn-off Switching Energy 623 D G off INDUCTIVE SWITCHING 125C J E 6 1423 Turn-on Switching Energy on V = 670V V = 15V DD GS E I = 28A, R = 5 Turn-off Switching Energy 779 D G off SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT 25 I Continuous Source Current (Body Diode) S Amps 1 I 100 Pulsed Source Current (Body Diode) SM 2 V Diode Forward Voltage (V = 0V, I = -I 25A) 1.3 Volts SD GS S D t Reverse Recovery Time (I = -I 25A, dl /dt = 100A/s) 1170 ns rr S D S Q Reverse Recovery Charge (I = -I 25A, dl /dt = 100A/s) 16.28 C rr S D S dv dv 5 V/ns / Peak Diode Recovery / 10 dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.24 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 9.60mH, R = 25 , Peak I = 25A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 25A / 700A/s V V T 150C dt S D R DSS J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 0.9 0.20 0.7 0.15 0.5 Note: 0.10 t 1 0.3 t 2 0.05 t 1 Duty Factor D = / t 2 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7016 Rev C 3-2003 Z , THERMAL IMPEDANCE (C/W) JC P DM