APT10045B2LL(G) APT10045LLL(G) 1000V 23A 0.450 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT s LLL patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular T-MAX or TO-264 Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT10045(G) UNIT V Drain-Source Voltage 1000 Volts DSS I Continuous Drain Current T = 25C 23 D C Amps 1 I Pulsed Drain Current 92 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts 565 C P D Linear Derating Factor 4.52 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 23 Amps AR 1 E 50 Repetitive Avalanche Energy AR mJ 4 E Single Pulse Avalanche Energy 2500 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) Volts 1000 DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 23 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, 11.5A) 0.450 Ohms DS(on) GS Zero Gate Voltage Drain Current (V = 1000V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 800V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 2.5mA) Volts 35 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT10045B2LL - LLL(G) Test Conditions Symbol Characteristic MIN TYP MAX UNIT C Input Capacitance 4350 iss V = 0V GS C Output Capacitance V = 25V 715 oss DS pF f = 1 MHz C Reverse Transfer Capacitance 120 rss 3 Q Total Gate Charge V = 10V 154 g GS V = 500V Q DD Gate-Source Charge 26 gs nC I = 23A 25C D Q Gate-Drain Mille) Charge 97 gd RESISTIVE SWITCHING t Turn-on Delay Time 10 d(on) V = 15V GS t Rise Time 5 r V = 500V DD ns t I = 23A 25C Turn-off Delay Time D 30 d(off) R = 1.6 G t Fall Time 8 f INDUCTIVE SWITCHING 25C E 6 Turn-on Switching Energy 639 on V = 670V, V = 15V DD GS I = 23A, R = 5 E 380 Turn-off Switching Energy D G off INDUCTIVE SWITCHING 125C J E 6 Turn-on Switching Energy 1046 on V = 670V V = 15V DD GS E I = 23A, R = 5 Turn-off Switching Energy 451 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN TYP MAX Characteristic / Test Conditions UNIT I 23 Continuous Source Current (Body Diode) S Amps I 1 92 Pulsed Source Current (Body Diode) SM 2 V 1.3 Diode Forward Voltage (V = 0V, I = -I 23A) Volts SD GS S D t 560 Reverse Recovery Time (I = -I 23A, dl /dt = 100A/s) ns rr S D S Q Reverse Recovery Charge (I = -I 23A, dl /dt = 100A/s) 5.50 C rr S D S dv dv 5 V/ns / 10 Peak Diode Recovery / dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.22 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 9.45mH, R = 25 , Peak I = 23A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 28A / 700A/s V V T 150C dt S D R DSS J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 0.9 0.20 0.7 0.15 0.5 Note: 0.10 t 1 0.3 t 2 t 0.05 1 Duty Factor D = / t 2 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7009 Rev C 3-2003 Z , THERMAL IMPEDANCE (C/W) JC P DM