APT10045B2FLL * APT10045LFLL * 1000V 23A 0.4 R B2FLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT s LFLL patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular T-MAX or TO-264 Package S FAST RECOVERY BODY DIODE MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT10045 UNIT V Drain-Source Voltage 1000 Volts DSS I Continuous Drain Current T = 25C 23 D C Amps 1 I Pulsed Drain Current 92 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts 565 C P D Linear Derating Factor 4.52 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 23 Amps AR 1 E 50 Repetitive Avalanche Energy AR mJ 4 E Single Pulse Avalanche Energy 2500 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) Volts 1000 DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 23 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, 11.5A) 0.46 Ohms DS(on) GS Zero Gate Voltage Drain Current (V = 1000V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 800V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 2.5mA) Volts 35 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT10045B2FLL - LFLL DYNAMIC CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT Test Conditions C Input Capacitance V = 0V 4350 iss GS V = 25V C pF Output Capacitance DS 715 oss f = 1 MHz C Reverse Transfer Capacitance 120 rss Q 3 Total Gate Charge V = 10V 154 g GS Q V = 500V nC Gate-Source Charge DD 26 gs I = 23A 25C Q D Gate-Drain Mille) Charge 97 gd RESISTIVE SWITCHING t 10 Turn-on Delay Time d(on) V = 15V GS t 5 Rise Time r ns V = 500V DD t Turn-off Delay Time 30 d(off) I = 23A 25C D t Fall Time R = 0.6 8 f G INDUCTIVE SWITCHING 25C E 6 Turn-on Switching Energy 639 on V = 670V, V = 15V DD GS E Turn-off Switching Energy I = 23A, R = 5 380 off D G J INDUCTIVE SWITCHING 125C 6 E Turn-on Switching Energy 1046 on V = 670V V = 15V DD GS E Turn-off Switching Energy I = 23A, R = 5 451 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 23 S Amps I 1 Pulsed Source Current (Body Diode) SM 92 2 V Volts SD Diode Forward Voltage (V = 0V, I = -23A) 1.3 GS S dv / dv 5 V/ns Peak Diode Recovery / 18 dt dt Reverse Recovery Time T = 25C 340 j t ns rr di (I = -23A, / = 100A/s) S dt T = 125C 640 j Reverse Recovery Charge T = 25C 1.78 j C Q rr di (I = -23A, / = 100A/s) S dt T = 125C 4.47 j Peak Recovery Current T = 25C 11.4 j I Amps RRM di (I = -23A, / = 100A/s) S dt T = 125C 16.4 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.22 JC C/W Junction to Ambient R 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 9.45mH, R = 25 , Peak I = 23A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 23A / 700A/s V V T 150C dt S D R DSS J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 0.9 0.20 0.7 0.15 0.5 Note: 0.10 t 1 0.3 t 2 t 0.05 1 Duty Factor D = / t 2 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7039 Rev D 2-2009 Z , THERMAL IMPEDANCE (C/W) JC P DM