APT100MC120JCU2 V = 1200V DSS ISOTOP Boost chopper SiC MOSFET + SiC chopper diode R = 17m max Tj = 25C DSon Power module I = 143A Tc = 25C D Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction Brake switch D Features SiC Power MOSFET G - Low R DS(on) - High temperature performance SiC Schottky Diode S - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP Package (SOT-227) K Very low stray inductance S High level of integration Benefits D Outstanding performance at high frequency G operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance ISOTOP Easy paralleling due to positive TC of VCEsat RoHS Compliant All ratings T = 25C unless otherwise specified j Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 1200 V DSS T = 25C 143 c I Continuous Drain Current D T = 80C 108 A c I Pulsed Drain current 280 DM V Gate - Source Voltage -10/+25 V GS R Drain - Source ON Resistance 17 m DSon P Maximum Power Dissipation T = 25C 600 W D c These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-6 www.microsemi.com APT100MC120JCU2 Rev 2 June, 2013 APT100MC120JCU2 Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Drain Current V = 0V , V = 1200V 20 200 A DSS GS DS T = 25C 12.5 17 V = 20V j GS R Drain Source on Resistance m DS(on) I = 100A T = 150C 22 32 D j V Gate Threshold Voltage V = V , I = 2mA 1.9 2.3 V GS(th) GS DS D I Gate Source Leakage Current V = 20 V, V = 0V 1 A GSS GS DS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 5960 iss V = 0V GS C Output Capacitance V = 1000V 440 pF oss DS f = 1MHz C Reverse Transfer Capacitance 46 rss Q Total gate Charge 360 g V = -2/+20V GS Q Gate Source Charge 64 V = 800V nC gs Bus I =100A D Q Gate Drain Charge 126 gd T Turn-on Delay Time 21 d(on) V = -2/+20V GS T Rise Time 19 r V = 800V Bus ns I = 100A T Turn-off Delay Time D 50 d(off) R = 8 R = 10 L G T Fall Time 30 f Inductive Switching E Turn on Energy T = 150C 2.2 on V = -5/+20V j GS V = 600V Bus mJ I = 100A D E Turn off Energy T = 150C 1.2 off j R = 10 G R Junction to Case Thermal Resistance 0.21 C/W thJC SiC chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 1200 V RRM T = 25C 70 400 j I Maximum Reverse Leakage Current V =1200V A RM R T = 175C 130 800 j I DC Forward Current Tc = 125C 40 A F T = 25C 1.5 1.8 j V Diode Forward Voltage I = 40A V F F T = 175C 2.2 3 j I = 40A, V = 1200V F R Q Total Capacitive Charge 260 nC C di/dt =1000A/s f = 1MHz, V = 200V 186 R C Total Capacitance pF f = 1MHz, V = 400V 134 R R Junction to Case Thermal Resistance 0.7 C/W thJC 2-6 www.microsemi.com APT100MC120JCU2 Rev 2 June, 2013