APT20M11JFLL 200V 176A 0.011 R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT sUL Recognize ISOTOP patented metal gate structure. Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular SOT-227 Package FAST RECOVERY BODY DIODE S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT20M11JFLL UNIT V Drain-Source Voltage 200 Volts DSS I Continuous Drain Current T = 25C 176 D C Amps 1 I Pulsed Drain Current 704 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient GSM 40 Total Power Dissipation T = 25C Watts C 694 P D Linear Derating Factor W/C 5.56 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 176 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 3600 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 200 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 88A) 0.011 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 200V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 160V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 5mA) Volts 35 DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT20M11JFLL Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance V = 0V 10320 iss GS V = 25V C pF Output Capacitance 4220 DS oss f = 1 MHz C Reverse Transfer Capacitance 90 rss Q 3 Total Gate Charge V = 10V 180 g GS Q V = 100V nC Gate-Source Charge DD 80 gs I = 176A 25C Q D Gate-Drain Mille) Charge 65 gd RESISTIVE SWITCHING t Turn-on Delay Time 24 d(on) V = 15V GS t 65 Rise Time r V = 100V ns DD t Turn-off Delay Time 55 d(off) I = 176A 25C D t R = 0.6 Fall Time 9 f G INDUCTIVE SWITCHING 25C 6 E Turn-on Switching Energy 1190 on V = 133V, V = 15V DD GS E Turn-off Switching Energy I = 176A, R = 5 2485 off D G J INDUCTIVE SWITCHING 125C E 6 Turn-on Switching Energy 1260 on V = 133V, V = 15V DD GS E Turn-off Switching Energy I = 176A, R = 5 2815 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 176 S Amps I 1 SM Pulsed Source Current (Body Diode) 704 V 2 Diode Forward Voltage (V = 0V, I = -176A) Volts SD 1.3 GS S dv dv / 5 V/ns dt Peak Diode Recovery / 8 dt Reverse Recovery Time T = 25C 250 j t ns rr di (I = -176A, / = 100A/s) S dt T = 125C 500 j Reverse Recovery Charge T = 25C 0.9 j C Q rr di (I = -176A, / = 100A/s) S dt T = 125C 2.5 j Peak Recovery Current T = 25C 12 j I Amps RRM di (I = -176A, / = 100A/s) S dt T = 125C 20 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.18 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 0.23mH, R = 25, Peak I = 176A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 176A / 700A/s V V T 150C dt S D R DSS J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.20 0.9 0.15 0.7 0.10 0.5 Note: t 1 0.3 t 0.05 2 t 1 Duty Factor D = / t 2 0.1 Peak T = P x Z + T J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7042 Rev C 9-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM